Nonvolatile Charge Injection Memory Based on Black Phosphorous 2D Nanosheets for Charge Trapping and Active Channel Layers

Abstract

wileyonlinelibrary.comwould have great potential in future nanotechnologies owing to their unique properties. A considerable amount of effort has been put in to conduct fundamental studies on the material properties of 2D vdWs and to develop nanoscale electronic and optoelectronic applications. As a result, remarkable progress has been made in the field of 2D vdWs in recent years. Of the many 2D vdWs materials, transition metal dichalcogenide (TMD) semiconductors can be regarded as promising active channel materials [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] to overcome the limitation of band gapless graphene that exhibits a strong metallic nature rather than semiconducting properties despite numerous efforts. [17][18][19] Molybdenum disulphide (MoS 2 ) [1][2][3][4][5][6][7][8] and tungsten diselenide (WSe 2 ) [9][10][11][12][13][14][15][16] are representative n-type and p-type (or p-type dominant ambipolar) TMD semiconductors, and prototypes of electronic and optoelectronic applications such as field-effect transistors (FETs), [1,2,4,6] light emitting diodes, [13] and photodiodes [14,20] have been demonstrated.The newest 2D vdWs material, known as black phosphorus (BP), was introduced in 2014. [21][22][23][24][25][26][27][28][29][30][31] BP is a single-component material like graphene; however, it has a narrow and direct band gap of 0.3 eV even in the bulk phase. Few-layered (5-10 nm) BP has an ambipolar semiconducting property with a high carrier mobility (≈1000 cm 2 V −1 s −1 ) and a reasonably high on-off current ratio (≈10 4 ). Therefore, BP 2D crystals have been generating significant interest among the research community, and they have been extensively studied. Several research groups have reported very interesting material properties of BP [22][23][24]31] and demonstrated BP-based applications such as FETs, [21,22,25,26] heterojunction p-n diodes, [27,28] and photodetectors. [29,30] However, beyond such basic unit devices, more advanced applications, e.g., logic circuits [22,32,33] or nonvolatile memory, [33,34] have been reported rarely.Here, we demonstrated charge injection memory (CIM) devices based on BP nanosheet FETs with patterned top gate geometry on a glass substrate. Few-layered BP flakes of similar thickness that were prepared by mechanical exfoliation were used as active channel and charge trapping layers. BP is known to be easily degraded by water and oxygen molecules in ambient air. In our previous study, we clearly verified the 2D van der Waals atomic crystal materials have great potential for use in future nanoscale electronic and optoelectronic applications owing to their unique properties such as a tunable energy band gap according to their thickness or number of layers. Recently, black phosphorous (BP) has attracted significant interest because it is a single-component material like graphene and has high mobility, a direct band gap, and exhibits ambipolar transition behavior. This study reports on a charge injection memory field-effect transistor on a glass substrate, where...

Mixed‐Dimensional 1D ZnO–2D WSe2 van der Waals Heterojunction Device for Photosensors

“…This approach using a 1D ZnO-2D WSe 2 heterojunction paves the way for the further development of electronic/optoelectronic applications using mixed-dimensional vdW heterostructures.transition metal dichalcogenides of MoS 2 , MoTe 2 , and WSe 2 , post-transition metal dichalcogenides of SnS 2 and SnSe 2 , and black phosphorus (BP), have been synthesized; furthermore, their prototype electronic/optoelectronic applications have been demonstrated for field-effect transistors, [3][4][5][6][7][8][9] logic circuits, [8,[10][11][12][13] light-emitting diodes, [14,15] phototransistors, [16][17][18][19][20] and photodiodes. In particular, the dangling-bond-free surface of 2D materials enables integration of differently dimensioned materials into mixed-dimensional vdW heterostructures.…”

Large‐Scale, Low‐Power Nonvolatile Memory Based on Few‐Layer MoS2 and Ultrathin Polymer Dielectrics

“…[18,34] Figure 4d exhibits both ΔV T and dN trap /dt as functions of the V CG pulse width. [18,34] Figure 4d exhibits both ΔV T and dN trap /dt as functions of the V CG pulse width.…”

Recent Advances in Black Phosphorus‐Based Electronic Devices

“…[51][52][53][54][55][56][57][58] Nonvolatile charge-trap memory is a popular type of solidstate memory technology that offers its excellent data storage performance and device scalability. In addition to these devices and modules operating with fixed characteristics, BP, being a promising layered semiconductor, has also been exploited for application in nonvolatile memory and circuits, which are regarded as critical components in many emerging electronic applications including neuromorphic computing, efficient data storage, as well as dynamically reconfigurable digital circuits.…”

“…[52,55,59] Compared with other 2D materials, for instance, MoS 2 , BP has the advantage of ambipolar transport characteristics. [52,55,59] Compared with other 2D materials, for instance, MoS 2 , BP has the advantage of ambipolar transport characteristics.…”