Nonvolatile Electric Control of the Anomalous Hall Effect in an Ultrathin Magnetic Metal

Abstract

Figure 9. Weak localization. a) Temperature-dependent sheet resistance of the Co/Pt film at the low resistance state. b) Temperature-dependent sheet resistance of the Co/Pt film below 40 K, under 0 and 0.1 T. www.advancedsciencenews.com

Anomalous Hall Effect, Robust Negative Magnetoresistance, and Memory Devices Based on a Noncollinear Antiferromagnetic Metal

“…Spintronic devices play a pivotal role in the current digital life. For example, ferromagnetic materials are intensively exploited in hard disks and data centers. , However, ferromagnet-based memory devices are rather susceptible to external magnetic stray fields, and thus the stored information could be easily destroyed by disturbing fields. Furthermore, the information writing speed in these ferromagnetic memory devices are, in principle, limited by the zero-magnetic-field ferromagnetic resonance frequency that is typically on the order of GHz, corresponding to a time scale of nanoseconds.…”

Nonvolatile electric-field-controlled anomalous Hall effect in ferrimagnetic GdFeCo film

“…Because the AHE is very sensitive to perpendicular moments [31], we examined the electric-field-controlled AHE at 296 and 90 K (see figures 2(a) and (b)). Although the piezoelectric strain is hysteretic under an applied electric field [32], adding an electric field that exceeds the materialspecific coercive field pole, the substrate produces a linear response to the generated strain.…”

A transparent room-temperature ferromagnetic semiconductor on glass: anatase Co-doped TiO2 oriented thin films with improved electrical conduction

“…10–12 Because its ferromagnetism can be probed electrically and optically via the anomalous Hall effect (AHE) and magneto-optical (MO) effect, respectively, 13–16 spintronic applications, such as spin transistors, nonvolatile memory, and magneto-optical sensors are expected. 17–24…”