Nonvolatile electrical control of spin polarization in the 2D bipolar magnetic semiconductor VSeF

Li, Yuhui; Deng, Jun; Zhang, Yanfang; Jin, Xin; Dong, Wen-Han; Sun, Jia‐Tao; Pan, Jinbo; Gao, Hong‐Jun

doi:10.1038/s41524-023-01005-8

Cited by 23 publications

(6 citation statements)

References 61 publications

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“…In Figs. S3(d)-S3(i) in the ESM, m-RETaO 4 and t-RETaO 4 are less stable compared to the m' phase, which agrees with experimental findings [72] and other computational results [70]. Table 2 summarizes the equilibrium properties derived from the fitting of the four Birch-Murnaghan EOS, including volume (V 0 ), energy (E 0 ), bulk modulus (B 0 ), and its first derivatives relative to pressure (B').…”

Section: Crystal Structuresupporting

confidence: 90%

Capturing and visualizing the phase transition mediated thermal stress of thermal barrier coating materials via a cross-scale integrated computational approach

Gan,

Lu,

et al. 2024

Journal of Advanced Ceramics

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The generation and evaluation of severely high thermal stress (σ) is known to be responsible for failure of thermal barrier coatings (TBCs) during thermal cycling. It is crucial and challenging to capture fluctuations in σ caused by the phase transition, which has motivated us to develop a high-throughput multiscale evaluation method for σ in TBCs that considers the phase transition of the top ceramic materials by coupling first-principles calculations with finite element simulations. The method quantitatively evaluates and visualizes σ of the real TBC structure under thermal cycling by multifield coupling. Additionally, the thermophysical properties calculated by the first-principles calculations consider the effects of temperature and phase transition, which not only reduces the cost of obtaining data but also has a more physical connotation. In this work, rare earth tantalites (RETaO 4 ) are introduced as ceramic layers, and the results demonstrate that σ undergoes a rapid escalation near the phase transition temperature (T t ), particularly in the TBCs_GdTaO 4 system, where it rises from 224 to 435 MPa. This discontinuity in σ may originate from the significant alterations in Young's modulus (increase by 27%-78%) and thermal conductivity (increase by 53%-146%) near T t . The TBCs_NdTaO 4 and TBCs_SmTaO 4 systems exhibit noteworthy temperature drop gradients and minimal σ fluctuations, which are beneficial for extending service lifetime of TBCs. This approach facilitates the prediction of failure mechanisms and provides theoretical guidance for the reverse design of TBC materials to obtain low thermal stress systems.

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Section: Crystal Structuresupporting

confidence: 90%

Capturing and visualizing the phase transition mediated thermal stress of thermal barrier coating materials via a cross-scale integrated computational approach

Gan,

Lu,

et al. 2024

Journal of Advanced Ceramics

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“…reported that 2 H-VS 2 [21], NbS 2 [22], Tri-phase ReS 2 [23], 1 T ′ -CrS 2 [25], VSeF [26], GdI 2 [27], EuGe 2 [31], α-Fe 2 O monolayer [28] and the ternary 2D layered transition metal sulfides CrPX 4 (X = S, Se) [29], Cr 2 Ge 2 Te 6 [24]and Iron(III) halides FeM 3 (M = F, Cl) [30], GdXY (X,Y = S, Se) [32] etc., are all BMSs.…”

Section: Two-dimensional Intrinsic Bmsmentioning

confidence: 99%

Recent progress in 2D bipolar magnetic semiconductors

Chen,

Wang,

et al. 2023

J. Phys.: Condens. Matter

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Bipolar magnetic semiconductor (BMS) is a class of magnetic semiconductors, whose valence band maximum and conduction band minimum are fully spin-polarized with opposite spin directions. Due to the special energy band, half-metallicity can be easily obtained in BMS by gate voltage, and the spin polarization can be reversed between spin-up and down when the gate voltage switches from positive to negative. BMSs have great potential applications in spintronic devices, such as the field-effect spin valves, spin filters and spin transistors, etc.. With the rapid progress of the two-dimensional (2D) magnetic materials, more and more 2D BMSs have been explored. In this paper, we review the research progress in 2D BMSs.

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“…The strong interlayer magnetoelectric coupling has been successfully established in layered HS multiferroics stacking up atomic layers of ferromagnets and FE materials, which realizes the control of magnetocrystalline anisotropy, − magnetic phase transition, − Dzyaloshinskii–Moriya interaction, , topological phase, and valley splitting . Particularly, the reversible switching from semiconductor to half-metal in 2D vdW HS based on the FE substrate not only realizes the generation of the spin-polarized carriers but also allows the manipulation, ,− which opens up the possibility for applications of 2D spintronics devices for memory storage, especially for 2D spin field-effect transistors (sFET). To achieve such device functions, FE materials are expected to always maintain semiconductor properties when they are in contact with ferromagnets.…”

Section: Introductionmentioning

confidence: 99%

Density Functional Theory Study of Nonvolatile Electrical Control of Half-Metallicity in Multiferroic RuCl₂/Al₂S₃ Heterostructures: Implications for Spin Memory Devices

Chen,

Wang,

Guo

et al. 2024

ACS Appl. Nano Mater.

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To overcome the volatility and high-power dissipation in conventional control approaches in spin-dependent devices, such as spin memory devices, there is an urgent need to realize nonvolatile all-electric spin manipulation in two-dimensional van der Waals (vdW) ferromagnetic (FM) semiconductors. Herein, we investigate the electronic and transport features of the multiferroic heterostructure (HS) RuCl 2 /Al 2 S 3 built by coupling the ferrovalley semiconductor RuCl 2 monolayer with the ferroelectric (FE) Al 2 S 3 monolayer by employing first-principles density functional theory plus nonequilibrium Green's function transport theory. It is shown that the nonvolatile and reversible switching between the FM semiconductor and half-metallicity can be realized in the RuCl 2 /Al 2 S 3 HS by electrically controlling the FE polarization states of the Al 2 S 3 sublayer. Moreover, the large out-of-plane magnetic anisotropy and Curie temperature near room temperature of RuCl 2 can also survive in the vdW RuCl 2 /Al 2 S 3 HS, which is of practical importance. Notably, the FE sublayer Al 2 S 3 still retains its original semiconducting nature in different polarization states, which is beneficial to realize the polarization switching via an applied electric field. Furthermore, an all-electric controlled valve effect with an ultrahigh on/off ratio and pure spin-polarized current in the on state is confirmed in conceptual two-probe devices based on the RuCl 2 /Al 2 S 3 HS. These findings shed light on the potential applications of the all-electrically controlled vdW multiferroic HS RuCl 2 /Al 2 S 3 in compact and highly efficient information processing and data storage.

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Nonvolatile electrical control of spin polarization in the 2D bipolar magnetic semiconductor VSeF

Cited by 23 publications

References 61 publications

Capturing and visualizing the phase transition mediated thermal stress of thermal barrier coating materials via a cross-scale integrated computational approach

Capturing and visualizing the phase transition mediated thermal stress of thermal barrier coating materials via a cross-scale integrated computational approach

Recent progress in 2D bipolar magnetic semiconductors

Density Functional Theory Study of Nonvolatile Electrical Control of Half-Metallicity in Multiferroic RuCl₂/Al₂S₃ Heterostructures: Implications for Spin Memory Devices

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Nonvolatile electrical control of spin polarization in the 2D bipolar magnetic semiconductor VSeF

Cited by 23 publications

References 61 publications

Capturing and visualizing the phase transition mediated thermal stress of thermal barrier coating materials via a cross-scale integrated computational approach

Capturing and visualizing the phase transition mediated thermal stress of thermal barrier coating materials via a cross-scale integrated computational approach

Recent progress in 2D bipolar magnetic semiconductors

Density Functional Theory Study of Nonvolatile Electrical Control of Half-Metallicity in Multiferroic RuCl2/Al2S3 Heterostructures: Implications for Spin Memory Devices

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Resources

About

Density Functional Theory Study of Nonvolatile Electrical Control of Half-Metallicity in Multiferroic RuCl₂/Al₂S₃ Heterostructures: Implications for Spin Memory Devices