Nonvolatile Ferroelectric‐Domain‐Wall Memory Embedded in a Complex Topological Domain Structure

Yang, Wenda; Tian, Guo; Fan, Hua; Zhao, Yüe; Chen, Hongying; Zhang, Luyong; Wang, Yadong; Fan, Zhen; Hou, Zhipeng; Chen, Deyang; Gao, Jinwei; Zeng, Min; Lu, Xubing; Qin, Minghui; Gao, Xingsen; Liu, Junming

doi:10.1002/adma.202107711

Cited by 41 publications

(27 citation statements)

References 46 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…It is also worth mentioning that the widely reported ferroelectric DW memory with the architecture of coplanar metal electrodes 27 , 28 , 53 , 57 is also supposed to be conceptually applicable to our BTO/Si prototype, except that the previously reported coplanar-electrode models are usually designed in two-terminal fashion, where the two terminals are used for both ‘writing’ and ‘reading’, as illustrated in Fig. 1a .…”

Section: Discussionmentioning

confidence: 99%

Nonvolatile ferroelectric domain wall memory integrated on silicon

Sun

Wang

et al. 2022

Nat Commun

View full text Add to dashboard Cite

Ferroelectric domain wall memories have been proposed as a promising candidate for nonvolatile memories, given their intriguing advantages including low energy consumption and high-density integration. Perovskite oxides possess superior ferroelectric prosperities but perovskite-based domain wall memory integrated on silicon has rarely been reported due to the technical challenges in the sample preparation. Here, we demonstrate a domain wall memory prototype utilizing freestanding BaTiO3 membranes transferred onto silicon. While as-grown BaTiO3 films on (001) SrTiO3 substrate are purely c-axis polarized, we find they exhibit distinct in-plane multidomain structures after released from the substrate and integrated onto silicon due to the collective effects from depolarizing field and strain relaxation. Based on the strong in-plane ferroelectricity, conductive domain walls with reading currents up to nanoampere are observed and can be both created and erased artificially, highlighting the great potential of the integration of perovskite oxides with silicon for ferroelectric domain wall memories.

show abstract

Section: Discussionmentioning

confidence: 99%

Nonvolatile ferroelectric domain wall memory integrated on silicon

Sun

Wang

et al. 2022

Nat Commun

View full text Add to dashboard Cite

show abstract

“…Film growth For this study, highly tetragonal Pb(Zr 0.1 Ti 0.9 )O 3 (PZT) was grown on (110) DyScO 3 (DSO) by pulsed laser deposition (PLD). The DSO substrates with a miscut angle of 0.1°towards the [1][2][3][4][5][6][7][8][9][10] direction were acquired from CrysTec GmbH. A thin layer of 20 nm SrRuO 3 (SRO) was deposited by PLD as well and served as a bottom electrode.…”

Section: Methodsmentioning

confidence: 99%

Giant switchable metallic-like conduction in 180° domain walls in tetragonal Pb(Zr,Ti)O3

Risch

Tikhonov

Luk’yanchuk

et al. 2022

Preprint

View full text Add to dashboard Cite

Conductive domain walls in ferroelectrics offer a promising concept of nanoelectronic circuits with 2D domain-wall channels playing roles of memristors or synoptic interconnections. However, domain wall conduction remains difficult to control and pA-range currents typically measured on individual walls are too low for single-channel devices. Charged domain walls show higher conductivity, but are generally unstable and difficult to create. Here, we show highly conductive and stable channels on ubiquitous 180°-domain walls in the archetypical ferroelectric, tetragonal Pb(Zr,Ti)O3. These electrically erasable/rewritable channels show tens of nanoamperes (200-400nA/μm) at voltages ≤2V and metallic-like non thermally-activated transport properties down to 4K, as confirmed by nanoscopic mapping. The domain structure analysis and phase-field simulations reveal complex switching dynamics, in which the extraordinary conductivity in strained Pb(Zr,Ti)O3 films is explained by an interplay between ferroelastic 90°-domains and 180°-domains. This work demonstrates the potential of accessible and stable arrangements of nominally uncharged domain walls for nanoelectronics.

show abstract

“…The first is the discovery of electrically conducting ferroelectric and ferroelastic DWs, which were demonstrated for BiFeO 3 (BFO) thin films 39 . Followed by a great deal of studies on other proper and improper ferroelectrics, 22,25,40–46 and extending from DC conduction to AC electronic properties of DWs, 47 the discovery has revolutionized our view on these interfaces, generating completely new ideas for logic‐device circuitry in nanoelectronics 48–53 . The second milestone is the clarification of the complex polar structure of lead‐based relaxor ferroelectrics, exemplified by (1− x )Pb(Mg 1/3 Nb 2/3 )O 3 – x PbTiO 3 (notation used PMN– x ′PT where x ′ = 100 x ), which has bothered our community for decades and has recently revealed relaxors as disordered materials containing densely packed low‐angle DWs 11,54,55 .…”

Section: Introductionmentioning

confidence: 99%

“…39 Followed by a great deal of studies on other proper and improper ferroelectrics, 22,25,[40][41][42][43][44][45][46] and extending from DC conduction to AC electronic properties of DWs, 47 the discovery has revolutionized our view on these interfaces, generating completely new ideas for logicdevice circuitry in nanoelectronics. [48][49][50][51][52][53] The second milestone is the clarification of the complex polar structure of lead-based relaxor ferroelectrics, exemplified by (1−x)Pb(Mg 1/3 Nb 2/3 )O 3 -xPbTiO 3 (notation used PMN-x′PT where x′ = 100x), which has bothered our community for decades and has recently revealed relaxors as disordered materials containing densely packed low-angle DWs. 11,54,55 This finding has opened new pathways toward understanding of the exceedingly large dielectric and piezoelectric properties of this class of materials.…”

Section: Introductionmentioning

confidence: 99%

Dynamics of domain walls in ferroelectrics and relaxors

2022

View full text Add to dashboard Cite

The dynamic contribution of domain walls (DWs) to application-relevant dielectric and piezoelectric properties of ferroelectrics and relaxor-based oxide ceramics has been in the focus since the earliest studies on these complex multifunctional materials. Despite the vital importance of DWs in the material design for targeted applications, the understanding of these interfaces has been significantly advanced only recently owing to the concurrent development of analytical methodologies probing the structure of samples in situ and at different length scales. In this contribution, we present two recent cases that have raised particular attention and controversy. The first is on the electrically conductive DWs in BiFeO 3 (BFO), whereas the second is on low-angle DWs characteristic for relaxor ferroelectric Pb(Mg 1/3 Nb 2/3 )O 3 −xPbTiO 3 (PMN-PT). Using nonlinear piezoelectric measurements with the support from multiscale structural analysis, we illustrate with the two case studies how, on one hand, the local electrical conductivity in BFO and, on the other hand, the structural disorder inherent to PMN-PT affect DW dynamics, leading to emerging macroscopic effects. By clarifying some of the aspects of these particular interfaces, we hope that the presented results will provide guidance to analytical approaches for identifying the key microscopic mechanisms contributing to macroscopic functional properties of ferroelectric and related materials.

show abstract

Nonvolatile Ferroelectric‐Domain‐Wall Memory Embedded in a Complex Topological Domain Structure

Cited by 41 publications

References 46 publications

Nonvolatile ferroelectric domain wall memory integrated on silicon

Nonvolatile ferroelectric domain wall memory integrated on silicon

Giant switchable metallic-like conduction in 180° domain walls in tetragonal Pb(Zr,Ti)O3

Dynamics of domain walls in ferroelectrics and relaxors

Contact Info

Product

Resources

About