Nonvolatile Memories with Dual-Layer Nanocrystalline ZnO Embedded Zr-Doped HfO[sub 2] High-k Dielectric

Lin, Chia-Hsiang; Kuo, Yue

doi:10.1149/1.3276055

Electrochem. Solid-State Lett.

2010

DOI: 10.1149/1.3276055

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Nonvolatile Memories with Dual-Layer Nanocrystalline ZnO Embedded Zr-Doped HfO[sub 2] High-k Dielectric

Chia-Hsiang Lin

Yue Kuo

Abstract: Metal-oxide-semiconductor memory capacitors composed of dual-layer nanocrystalline ZnO embedded zirconium-doped hafnium oxide high-k film were fabricated, characterized, and compared with those with the single-layer nanocrystalline ZnO embedded sample. Distinct layers of discretely dispersed nanocrystalline dots embedded in the amorphous high-k matrix were observed. The nanocrystalline ZnO dots trap many electrons. The dual-layer sample not only drastically increases the charge storage density but also improve… Show more

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Cited by 32 publications

(34 citation statements)

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“…12 In addition, nanocrystalline germanium (nc-Ge) and zinc oxide (nc-ZnO) dots have been embedded in HfO 2 and ZrHfO high-k films, respectively, as the charge trapping media to achieve the memory function. 13,14 Since CdSe is a n-type semiconductor with a large work function, i.e., between 4.8 eV and 5 eV, 15 it can be embedded in the gate dielectric layer to trap and retain charges for a long period of time. In addition, the energy band gap of CdSe is smaller than that of ZnO, i.e., 2.3 eV vs. 3.3 eV, which favors the former's charge retention capability.…”

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Memory functions of nanocrystalline cadmium selenide embedded ZrHfO high-k dielectric stack

Lin

Kuo

2014

Journal of Applied Physics

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Metal-oxide-semiconductor capacitors made of the nanocrystalline cadmium selenide nc-CdSe embedded Zr-doped HfO2 high-k stack on the p-type silicon wafer have been fabricated and studied for their charge trapping, detrapping, and retention characteristics. Both holes and electrons can be trapped to the nanocrystal-embedded dielectric stack depending on the polarity of the applied gate voltage. With the same magnitude of applied gate voltage, the sample can trap more holes than electrons. A small amount of holes are loosely trapped at the nc-CdSe/high-k interface and the remaining holes are strongly trapped to the bulk nanocrystalline CdSe site. Charges trapped to the nanocrystals caused the Coulomb blockade effect in the leakage current vs. voltage curve, which is not observed in the control sample. The addition of the nanocrystals to the dielectric film changed the defect density and the physical thickness, which are reflected on the leakage current and the breakdown voltage. More than half of the originally trapped holes can be retained in the embedded nanocrystals for more than 10 yr. The nanocrystalline CdSe embedded high-k stack is a useful gate dielectric for this nonvolatile memory device.

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Memory functions of nanocrystalline cadmium selenide embedded ZrHfO high-k dielectric stack

Lin

Kuo

2014

Journal of Applied Physics

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“…Indium Tin oxide) were also proposed as NCs due to their high work function and large band-gap. 6,7 The performance could be further improved by using dual-layer nanodot structure. 6,7 Owing to the conductive properties of metal and conductive oxide, well-separated NCs are required to suppress charge migration and charge leakage.…”

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“…6,7 The performance could be further improved by using dual-layer nanodot structure. 6,7 Owing to the conductive properties of metal and conductive oxide, well-separated NCs are required to suppress charge migration and charge leakage. Recently, metal-oxide dielectric nanocrystal memories (e.g.…”

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Charge-Trapping Characteristics of Ga2O3 Nanocrystals for Nonvolatile Memory Applications

Huang

Peng

Sin

2012

ECS Solid State Letters

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capacitors. The formation of Ga 2 O 3 NCs and their chemical bonding states were characterized by transmission electron microscopy and X-ray photoelectron spectroscopy. Compared with the device with Ga 2 O 3 NCs as chargetrapping layer, the one with nitrided Ga 2 O 3 NCs showed a larger memory window (4.7 V at ±10-V sweeping voltage), higher program speed (3.0 V at 100-μs +10 V), and data retention (charge loss of 27% at 125 • C), due to higher charge-trapping efficiency of the nitrided Ga 2 O 3 NCs and nitrogen-induced suppressed formation of interlayer at the Ga 2 O 3 /SiO 2 interface. Nanocrystal (NC)-based discrete-charge-storage nonvolatile memories have been considered as a promising candidate to replace the conventional floating-gate counterparts due to their stronger scaling ability, higher reliability, and lower program/erase (P/E) voltages. In this scope, many kinds of materials, such as Si, Ge, Pt, W, Ag and Au, have been proposed to act as NCs for memory applications. 1-4 Compared with semiconductor NCs (e.g. Si, Ge), the metal NCs have higher deep-level trap density around Femi level and a wider range of work function. 4,5 The main concerns for metal NCs lie in their poor thermal stability as well as incompatibility with metaloxide-semiconductor (MOS) process due to metal contamination. In addition, semiconducting oxide (e.g. ZnO) and conductive oxide (e.g. Indium Tin oxide) were also proposed as NCs due to their high work function and large band-gap. 6,7 The performance could be further improved by using dual-layer nanodot structure. 6,7 Owing to the conductive properties of metal and conductive oxide, well-separated NCs are required to suppress charge migration and charge leakage. Recently, metal-oxide dielectric nanocrystal memories (e.g. Gd 2 O 3 , Al 2 O 3 ) have attracted increasing interest because of their simple fabrication process, compatibility with MOS process, and high trap density. 5,8 Among various dielectrics, Ga 2 O 3 is well-known for its small bandgap (E g ∼ 4.4 eV versus 5.4 eV for Gd 2 O 3 , 8.8 eV for Al 2 O 3 ), thus leading to a larger barrier height between Ga 2 O 3 and the SiO 2 tunneling layer (TL). 9,10 Moreover, Ga 2 O 3 has a similar free energy of formation as SiO 2 (−998.3 kJ/mol versus −856.4 kJ/mol at 25 • C. −320.5 kJ/mol for ZnO; −520 kJ/mol for SnO 2 ; −1739.5 kJ/mol for Gd 2 O 3 ; −1582.3 kJ/mol for Al 2 O 3 ). 11 Consequently, a good Ga 2 O 3 /SiO 2 interface due to suppressed interfacial reaction can be also expected, which is desirable for good data retention of the memory device. 12 Nitrogen incorporation in dielectrics can also induce more deep traps, 13 and improve thermal stability and suppress elemental inter-diffusion. 10 Therefore, based on metalalumina-nitride-oxide-silicon (MANOS) capacitors, this work aims to study the charge-trapping characteristics of nitrided Ga 2 O 3 NC by comparison with that without nitrogen incorporation. ExperimentalMANOS capacitors with Al/Al 2 O 3 /Ga 2 O 3 NCs/SiO 2 /Si were fabricated on p-type silicon substrate. After a ...

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“…ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 131.211.62 10. Downloaded on 2015-03-16 to IP…”

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confidence: 99%

Material and Electrical Properties of Hole-Trapping Memory Capacitors Composed of nc-ITO Embedded ZrHfO High-k Films

Lin

Kuo

2011

ECS Trans.

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The material and electrical properties of MOS memory capacitors composed of single-and dual-layer nc-ITO embedded ZrHfO high-k films have been investigated. The dual-layer nc-ITO embedded sample shows a higher charge trapping density than the single-layer nc-ITO embedded sample does. The formation of an interface layer at the nc-ITO and ZrHfO contact region is confirmed by XPS analysis. The memory function is mainly based on trapping holes at both the bulk and interface of the nc-ITO site. The frequency-dependent C-V and G-V results indicate that parts of holes are loosely trapped at the nc-ITO/ZrHfO interfaces. The hole-trapping and -detrapping phenomena are also confirmed from the J-V measurements.

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Nonvolatile Memories with Dual-Layer Nanocrystalline ZnO Embedded Zr-Doped HfO[sub 2] High-k Dielectric

Cited by 32 publications

References 26 publications

Memory functions of nanocrystalline cadmium selenide embedded ZrHfO high-k dielectric stack

Memory functions of nanocrystalline cadmium selenide embedded ZrHfO high-k dielectric stack

Charge-Trapping Characteristics of Ga2O3 Nanocrystals for Nonvolatile Memory Applications

Material and Electrical Properties of Hole-Trapping Memory Capacitors Composed of nc-ITO Embedded ZrHfO High-k Films

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