Nonvolatile Memory and Computing Using Emerging Ferroelectric Transistors

Li, Xueqing; Lai, Longqiang

doi:10.1109/isvlsi.2018.00141

Cited by 9 publications

(3 citation statements)

References 35 publications

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“…It has renewed enormous interests due to the ferroelectricity observed in pure and doped HfO 2 -based films [6][7][8][9][10][11][12][13]. Ferroelectric hafnium-based materials have exhibited great potential in future information storage technology [14][15][16]. At room temperature and ambient pressure, HfO 2 is monoclinic (m) P2 1 /c phase [10,12,17,18].…”

Section: Introductionmentioning

confidence: 99%

Effects of strain on the electronic, optical, and ferroelectric transition properties of HfO₂: ab initio simulation study

2021

J. Phys.: Condens. Matter

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The amazing ferroelectricity observed in Hafnium oxide (HfO2) thin films is due to the existence of non-centrosymmetric orthorhombic Pca21 phase. In this study, the structural, electronic, optical, and polarization switching properties of the orthorhombic Pca21 phase with various strains are investigated by employing density functional theory (DFT) calculations based on the DFT. Out-of-plane and in-plane strains are taken into consideration. The results indicate that the band-gap values of orthorhombic HfO2 increase at first and then decrease from compressive strain to tensile strain due to the variation of the valence band maximum and the conduction band minimum. Moreover, orthorhombic HfO2 transforms into a direct bandgap material when compressive strain along the z direction is larger than or equal to 5%. A red-shift occurs under both tensile and compressive strains in the absorption edge compared with instinct HfO2 in the absorption spectra. The absorption intensity of the strained HfO2 is enhanced with the energy below 5.5 eV. The energy barriers of path A and path B of the polarization switching mediated by non-polar tetragonal phase are 116.8 and 91.2 meV per formula unit (meV/f.u.), respectively. In polarization switching without mediated by non-polar phase, the energy barriers decrease with the increasing of out-of-plane compressive strain along the x direction and tensile strain along the y direction compared with strain free structures.

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Section: Introductionmentioning

confidence: 99%

Effects of strain on the electronic, optical, and ferroelectric transition properties of HfO₂: ab initio simulation study

2021

J. Phys.: Condens. Matter

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“…The emerging Non-Volatile Memory (NVM) technologies provide quality hardware architecture due to its instant power-on speed, CMOS compatibility, high density [22,23], and standby power free [24]. To build up the non-volatile multiplier using NVMs, the full adder [25], flip-flop [26], and other basic arithmetic logic circuits are the most critical steps in constructing an in-memory computing system.…”

Section: Resistive Non-volatile Memorymentioning

confidence: 99%

An 8-bit Radix-4 Non-Volatile Parallel Multiplier

Zhu

Huang

et al. 2021

Electronics

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The data movement between the processing and storage units has been one of the most critical issues in modern computer systems. The emerging Resistive Random Access Memory (RRAM) technology has drawn tremendous attention due to its non-volatile ability and the potential in computation application. These properties make them a perfect choice for application in modern computing systems. In this paper, an 8-bit radix-4 non-volatile parallel multiplier is proposed, with improved computational capabilities. The corresponding booth encoding scheme, read-out circuit, simplified Wallace tree, and Manchester carry chain are presented, which help to short the delay of the proposed multiplier. While the presence of RRAM save computational time and overall power as multiplicand is stored beforehand. The area of the proposed non-volatile multiplier is reduced with improved computing speed. The proposed multiplier has an area of 785.2 μm2 with Generic Processing Design Kit 45 nm process. The simulation results show that the proposed multiplier structure has a low computing power at 161.19 μW and a short delay of 0.83 ns with 1.2 V supply voltage. Comparative analyses are performed to demonstrate the effectiveness of the proposed multiplier design. Compared with conventional booth multipliers, the proposed multiplier structure reduces the energy and delay by more than 70% and 19%, respectively.

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“…Near hysteresis-free NC-TFETs with a sub-thermionic swing over about four decades of current and a minimum of 30~40 mV/dec are experimentally demonstrated by fulfilling the NC matching conditions [6]. As a result, the NCFET has become a competitive candidate to keep up with Moore's law, and the all-around performance of integrated circuits shows bright prospects with the aid of NCFET [7].…”

Section: Introductionmentioning

confidence: 99%

Performance optimization of GaAs NCFET with a complex oxide ferroelectric gate

Jia,

Li,

et al. 2024

Preprint

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In this work, we try to design a high-performance GaAs NCFET with ferroelectric 0.85BiTi0.1Fe0.8Mg0.1O3-0.15CaTiO3 (BTFM-CTO) gate dielectric. A detailed simulation was first made on GaAs NCFET to clarify the influence of key structural factors on the performance of NCFET. Simulation results indicate these factors have effects on capacitances match. Moreover, key factors will also affect the device performance and result in the variation of some effects such as negative differential resistance (NDR), gate voltage amplification (GVA), short channel effect (SCE), and saturation of carrier mobility (SCM). These effects influence and constraint each other. The competition between these effects makes the performance not monotonously vary with factors and highly depends on other parameters or voltage bias. Mobility, band energy diagram, electric potential along channel surface, and substrate capacitance are then investigated to make detailed analyses of simulation results. These simulation results and analysis are valuable to optimize NCFET and adjust the drive strength of NCFET with a given ferroelectric film, which would benefit the further application of NCFET. Finally, optimization of the NCFET with BTFM-CTO has been done. A steep SS value of 44.9 mV/dec and a high ION/ IOFF value of 1.2×109 is achieved with a low supply voltage of 0.6 V, demonstrating that the BTFM-CTO film is a competitive candidate for a ferroelectric layer applied in GaAs NCFET. The current work may generate new insights into advanced NCFET based on GaAs with high ION/ IOFF.

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Nonvolatile Memory and Computing Using Emerging Ferroelectric Transistors

Cited by 9 publications

References 35 publications

Effects of strain on the electronic, optical, and ferroelectric transition properties of HfO₂: ab initio simulation study

Effects of strain on the electronic, optical, and ferroelectric transition properties of HfO₂: ab initio simulation study

An 8-bit Radix-4 Non-Volatile Parallel Multiplier

Performance optimization of GaAs NCFET with a complex oxide ferroelectric gate

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Nonvolatile Memory and Computing Using Emerging Ferroelectric Transistors

Cited by 9 publications

References 35 publications

Effects of strain on the electronic, optical, and ferroelectric transition properties of HfO2: ab initio simulation study

Effects of strain on the electronic, optical, and ferroelectric transition properties of HfO2: ab initio simulation study

An 8-bit Radix-4 Non-Volatile Parallel Multiplier

Performance optimization of GaAs NCFET with a complex oxide ferroelectric gate ​

Contact Info

Product

Resources

About

Effects of strain on the electronic, optical, and ferroelectric transition properties of HfO₂: ab initio simulation study

Effects of strain on the electronic, optical, and ferroelectric transition properties of HfO₂: ab initio simulation study

Performance optimization of GaAs NCFET with a complex oxide ferroelectric gate