2011
DOI: 10.1166/jnn.2011.3165
|View full text |Cite
|
Sign up to set email alerts
|

Nonvolatile Memory Characteristics of WSi2 Nanocrystals Embedded in SiO2 Dielectrics

Abstract: A nano-floating gate capacitor with WSi2 nanocrystals embedded in SiO2 dielectrics was fabricated. The WSi2 nanocrystals were created from ultrathin WSi2 film during rapid thermal annealing process and their average size and density were about 2.5 nm and 3.59 x 10(12) cm(-2), respectively. The flat-band voltage shift due to the carrier charging effect of WSi2 nanocrystals were measured up to 5.9 V when the gate voltage sweep in the range of +/- 9 V. The memory window was decreased from 3.7 V to 1.9 V after 1 h… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Year Published

2012
2012
2018
2018

Publication Types

Select...
3

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
references
References 12 publications
0
0
0
Order By: Relevance