Nonvolatile memory devices based on poly(vinyl alcohol) + graphene oxide hybrid composites

Abstract

Nonvolatile memory devices based on active layers of poly(vinyl alcohol) (PVA) + graphene oxide (GO) hybrid composites have been fabricated. The performance of the ITO/PVA + GO/Al device was compared with that of the ITO/PVA/Al device. The ITO/PVA + GO/Al device showed excellent performance compared to the ITO/PVA/Al device (an ON/OFF resistance ratio of 1.2 × 10(2) at 1 V, V(SET )∼ -1.45 V and V(RESET) ∼ 3.6 V), with a higher ON/OFF resistance ratio of 3 × 10(4) at 1 V and lower operating voltages of V(SET) ∼ -0.75 V and V(RESET) ∼ 3.0 V. Furthermore, endurance performance and write-read-erase-reread (WRER) cycle tests manifest that the presence of GO in ITO/PVA + GO/Al devices makes them have better stability and repeatability. The results show that the performance of hybrid devices can be effectively enhanced by the introduction of GO into the PVA matrix.

Recent Advances in Memory Devices with Hybrid Materials

“…Zhang et al prepared the active layer in the memory device based on polymer covalently functionalized RGO sheet. [21,[30][31][32] Recently, Sun et al fabricated nonvolatile memory devices based on hybrid composites of poly(vinyl alcohol) (PVA) and GO [102] (Figure 3g). [29] The electrical switching properties of the memory device showed nonvolatile rewritable memory effects (Figure 3d).…”

“…[103][104][105][106][107] [20] Copyright 2010, John Wiley & Sons, Inc. b) Schematic image of hydrogen bonding between BCP and GO. [29] Al/PVA-GO/ITO −0.75 10 4 1 × 10 4 1.5 × 10 4 [102] www.advelectronicmat.de materials, MoS 2 nanosheets have been demonstrated to be useful in some electronic and optoelectronic applications. Reproduced with permission.…”

Bistable electrical switching and nonvolatile memory effects by doping different amounts of GO in poly(9,9-dioctylfluorene-2,7-diyl)

“…When the voltage is applied in the opposite direction, Joule heating breaks the original path, the current drops suddenly, and the device returns to the OFF state. [30][31][32] This constitutes a cycle of writeread-erase-rewrite. Therefore, the device shows both bistable electrical switching and memory characteristics.…”

Bistable non-volatile resistive memory devices based on ZnO nanoparticles embedded in polyvinylpyrrolidone

“…The distribution and concentration of additives in the blend memory material has a signicant inuence on the reversibility or volatility of the lm resistor. 16 To date, inorganic nanomaterials, including metal NPs, 17,18 metal oxide NPs, 19,20 suldes, 21,22 and carbon materials, [23][24][25] have been widely investigated as a active layers of RRAM. Among these inorganic nanoparticles, n-type semiconductor ZnO NPs have attracted extensive attention due to their wide band gap (3.37 eV), strong electron mobility ($120 cm 2 V s À1 ), high excitation binding energy (60 meV), high melting point, excellent chemical stability, and good charge carrier transport performance.…”