Nonvolatile Memory Using Epitaxially Grown Composite-Oxide-Film Technology

Kato, Yasuyuki; Kaneko, Yukihiro; Tanaka, Hiroyuki; Shimada, Yasuhiro

doi:10.1143/jjap.47.2719

Cited by 71 publications

(63 citation statements)

References 26 publications

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“…Figure 3(a) shows a SEM image of an area of a LSMO bilayer deposited over strontium titanate substrate using the spin coating technique. The LSMO bilayer shows good morphological characteristics that are comparable with those reported for films deposited using more sophisticated techniques, such as pulse laser deposition [18]. The analyzed film surface does not show a strong granular character, which indicates the formation of a dense surface.…”

Section: Resultssupporting

confidence: 72%

Spin Coating technique for obtaining nanometric thin films in the system La0.7Sr0.3MnO3

Mera-Córdoba

Córdoba-Barahona

2017

Rev. Fac. Ing.

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Manganite in the La 0.7 Sr 0.3 MnO 3 system is of great interest due to its potential application in fuel cells, information storage, magnetic field sensors, non-volatile memories, oxygen sensors, and catalysts in the oxidation of light hydrocarbons. Given the scientific relevance of this material, this study describes the procedure to synthesize and characterize thin films of La 0.7 Sr 0.3 MnO 3 . Manganites were synthesized by means of the Pechini method, and deposited on strontium titanate substrates using spin-coating. Both the crystallinity of the films and their phases were studied with X-ray diffraction (XRD), finding that the films are polycrystalline and have a simple cubic structure with a lattice constant a=3.8653 ± 0.066 Ǻ. Scanning electron microscopy (SEM) showed a uniform surface with good morphological features, and the spectrum resulted from the Energy Dispersive X-Ray Spectroscopy (EDS) analysis over the same film was consistent with the molar ratio of the perovskite. Samples of 2, 4, and 6 layers were synthesized, obtaining thicknesses of 75.10 ± 0.01, 75.02 ± 0.01 and 74.07 ± 0.08 nm per monolayer. The results indicate that this method is useful to synthesize films of high crystalline quality and nanometric size.Keywords: manganite; Perovskite; thin films . ResumenLas manganitas en el sistema La 0,7 Sr 0,3 MnO 3 son de gran interés por su potencial aplicación en celdas de combustibles, almacenamiento de información, sensores de campo magnético, memorias no volátiles, sensores de oxígeno y catalizadores en la oxidación de hidrocarburos ligeros; dada la importancia científica que tiene este material, este trabajo presenta el procedimiento de síntesis y caracterización de películas delgadas de La 0,7 Sr 0,3 MnO 3 . Las manganitas se sintetizaron por el método de Pechini y fueron depositadas por Spin Coating en forma de películas delgadas en sustratos de titanato de estroncio. La cristalinidad de las películas y las fases presentes se estudiaron por difracción de rayos-X (DRX), encontrándose que las películas son de naturaleza policristalina y presentan * M. Sc. Institución Universitaria CESMAG (Pasto-Nariño, Colombia). gamera@iucesmag.edu.co. ** Universidad de Nariño (Pasto-Nariño, Colombia). *** M. Sc. Universidad de Nariño (Pasto-Nariño, Colombia). carcob@udenar.edu.co. Fecha de recepción: 7 de junio de 2016 Fecha de aprobación: 20 de noviembre de 2016Jenny Alejandra Mera-Córdoba -María Angélica Mera-Córdoba -Carlos Arturo Córdoba-Barahona Spin Coating technique for obtaining nanometric thin films in the system La0.7Sr0.3MnO3 estructura cúbica simple con contante de red a=3.8653 ± 0,066 Ǻ. La microscopía electrónica de barrido (SEM) muestra una superficie uniforme con buenas características morfológicas, y el espectro EDS medido sobre la misma película mostró consistencia con la relación molar de la perovskita. Se sintetizaron muestras de 2, 4 y 6 capas, obteniendo espesores de 75,10 ± 0,01, 75,02 ± 0,01 y 74,07 ± 0,08 nm por monocapa. Los resultados indican que con este método es posi...

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Section: Resultssupporting

confidence: 72%

Spin Coating technique for obtaining nanometric thin films in the system La0.7Sr0.3MnO3

Mera-Córdoba

Córdoba-Barahona

2017

Rev. Fac. Ing.

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“…A highly orientated ferroelectric film and a clear interface are the key techniques to realize good electrical properties [29], [30]. Therefore, we used a Pt(111) film as the seed layer for the gate electrode to grow a well-oriented film on polycrystalline or amorphous substrates.…”

Section: Device Structure and Fabricationmentioning

confidence: 99%

Ferroelectric Artificial Synapses for Recognition of a Multishaded Image

Kaneko

Ueda

2014

IEEE Trans. Electron Devices

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143

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We demonstrate, for the first time, the on-chip pattern recognition of a multishaded grayscale image in a neural network circuit with multiple neurons. This pattern recognition is based on a spiking neural network model that uses multiple threeterminal ferroelectric memristors (3T-FeMEMs) as synapses. The synapse chip of the neural network is formed by stacking CMOS circuits and 3T-FeMEMs. The conductance of the 3T-FeMEM is gradually changed in the linear range by varying the amplitude of the applied voltage pulse. Using the analog and nonvolatile conductance change of the 3T-FeMEM as synaptic weight, the matrix patterns are learned after the spike timing-dependent plasticity learning rule. Even when an incomplete multishaded pattern is input to the neural network circuit, it automatically completes and recalls a previously learned pattern.Index Terms-Artificial neural network, ferroelectric devices, memristor, neural network hardware, nonvolatile memory, pattern recognition.

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“…Kato et al reported that a 2D electron gas is formed at the PZT/ZnO interface and can be controlled by the polarization direction of the PZT. [ 15 ] Yoon et al reported research on an organic ferroelectric thin-fi lm transistor using Al 2 O 3 as an insulating layer and ZnO as a channel layer. [ 16 ] 3.…”

Section: Introductionmentioning

confidence: 99%

Tristate Memory Using Ferroelectric-Insulator-Semiconductor Heterojunctions for 50% Increased Data Storage

et al. 2011

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Ferroelectric random‐access memory (FeRAM) is considered to be one of the best candidates for universal memory. However, difficult scaling of the memory cell size has hindered the realization of high density FeRAM. Given that size scaling is inherently limited by the complicated crystal structure and processing of ferroelectric materials, the highly stable and step‐wise three memory state of one cell can be another pathway to high‐density FeRAM. A feasible structure and actual operation of a tristate memory function for high‐density FeRAM is presented that uses stacked ferroelectric Pb(Zr,Ti)O3/insulating Al2O3/semiconducting ZnO layers with Pt top and bottom electrodes. The complicated electrical responses of the stacked structure to external stimuli are well understood based on the separated trapping of the compensating charges at the Pb(Zr,Ti)O3/Al2O3 and Al2O3/ZnO interfaces and the discrete dissipation of the trapped charges during polarization switching in one direction. This unique function of the structure induces three discrete charge states that can be used to increase the memory density by 50% compared to conventional FeRAM at a given cell size.

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Nonvolatile Memory Using Epitaxially Grown Composite-Oxide-Film Technology

Cited by 71 publications

References 26 publications

Spin Coating technique for obtaining nanometric thin films in the system La0.7Sr0.3MnO3

Spin Coating technique for obtaining nanometric thin films in the system La0.7Sr0.3MnO3

Ferroelectric Artificial Synapses for Recognition of a Multishaded Image

Tristate Memory Using Ferroelectric-Insulator-Semiconductor Heterojunctions for 50% Increased Data Storage

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