Nonvolatile nano-crystal floating gate OFET memory with light assisted program

Wang, Hong; Ji, Zhuoyu; Shang, Liwei; Chen, Yingping; Han, Meng; Liu, Xin; Peng, Yingquan; Liu, Ming

doi:10.1016/j.orgel.2011.03.037

Cited by 42 publications

(22 citation statements)

References 20 publications

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“…Both a thin metal layer and nanoparticles can be used as the floating gate. This type of floating gate structure is now successfully applied in OFET‐based non‐volatile memory cells 59, 64, 158–163. Dual channel OFETs is an interesting device architecture that can function as a traditional ChemFET wherein two coupled OFETs possessing a common gate insulator.…”

Section: Strategies Toward Multi‐functional Integration Of Ofetsmentioning

confidence: 99%

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Multi‐Functional Integration of Organic Field‐Effect Transistors (OFETs): Advances and Perspectives

2012

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Multi-functional organic field-effect transistors (OFETs), an emerging focus of organic optoelectronic devices, hold great potential for a variety of applications. This report introduces recent progress on multi-functional OFETs including OFETs based sensors, phototransistors, light-emitting transistors, memory cells, and magnetic field-effect OFETs. Key strategies towards multi- functional integration of OFETs, which involves the exploration of functional materials, interfaces modifications, modulation of condensed structures, optimization of device geometry, and device integration, are summarized. Furthermore, remaining challenges and perspectives are discussed, giving a comprehensive overview of multi-functional OFETs.

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Section: Strategies Toward Multi‐functional Integration Of Ofetsmentioning

confidence: 99%

Section: Strategies Toward Multi‐functional Integration Of Ofetsmentioning

confidence: 99%

Multi‐Functional Integration of Organic Field‐Effect Transistors (OFETs): Advances and Perspectives

2012

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“…One of the major directions is proposed for electronics to construct a kind of system for light‐sensing and data‐storage . Organic optical memory devices with dual optoelectronic functionality have been proposed to address this issue . The channel conductance of these devices can be adjusted by both electrical field and light source, therefore the multilevel data storage in single cell can be easily realized .…”

Section: Flexible Data Storage Devices Based On Transistor Structurementioning

confidence: 99%

Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials

Zhou

Mao

Ren

et al. 2018

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148

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Following the trend of miniaturization as per Moore's law, and facing the strong demand of next-generation electronic devices that should be highly portable, wearable, transplantable, and lightweight, growing endeavors have been made to develop novel flexible data storage devices possessing nonvolatile ability, high-density storage, high-switching speed, and reliable endurance properties. Nonvolatile organic data storage devices including memory devices on the basis of floating-gate, charge-trapping, and ferroelectric architectures, as well as organic resistive memory are believed to be favorable candidates for future data storage applications. In this Review, typical information on device structure, memory characteristics, device operation mechanisms, mechanical properties, challenges, and recent progress of the above categories of flexible data storage devices based on organic nanoscaled materials is summarized.

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“…Among several types of memory, resistive switching memory, which exhibits resistance switching between a high resistance state (HRS) and a low resistance state (LRS), is the most promising candidate for the new generation of memory devices. This is due to its simple structure, easy fabrication, low power consumption, and excellent scalability . Recently, protein molecules have been demonstrated to exhibit resistance switching memory characteristics.…”

Section: Introductionmentioning

confidence: 99%

Resistive Switching Memory Devices Based on Proteins

et al. 2015

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Resistive switching memory constitutes a prospective candidate for next-generation data storage devices. Meanwhile, naturally occurring biomaterials are promising building blocks for a new generation of environmentally friendly, biocompatible, and biodegradable electronic devices. Recent progress in using proteins to construct resistive switching memory devices is highlighted. The protein materials selection, device engineering, and mechanism of such protein-based resistive switching memory are discussed in detail. Finally, the critical challenges associated with protein-based resistive switching memory devices are presented, as well as insights into the future development of resistive switching memory based on natural biomaterials.

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Nonvolatile nano-crystal floating gate OFET memory with light assisted program

Cited by 42 publications

References 20 publications

Multi‐Functional Integration of Organic Field‐Effect Transistors (OFETs): Advances and Perspectives

Multi‐Functional Integration of Organic Field‐Effect Transistors (OFETs): Advances and Perspectives

Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials

Resistive Switching Memory Devices Based on Proteins

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