Nonvolatile write-once-read-many-times memory device with functionalized-nanoshells/PEDOT:PSS nanocomposites

Bistable electrical switching and nonvolatile memory effect in carbon nanotube–poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) composite films

“…3,4 The organic memory is based on the high and low conductivity response of the device to external applied voltage, making these devices suitable for applications in random access memories. [7][8][9][10][11][12] Carbon nanostructures have been extraordinarily attractive because of their application in a wide range of organic devices. 5,6 In recent years, polymeric materials and their composites with carbon nanotubes have obtained wide applications in organic electronics.…”

Ferroelectric-like hysteresis effect observed in carbon quantum dots sandwiched between PMMA and PEDOT:PSS hybrid film

“…In the memory mechanism investigations, insulating polymer PMMA is generally considered as barrier layer for preventing the carriers escaping [1,12,16] and PEDOT:PSS is usually taken as memory unit. In addition, the oxidation and the reduction of the PEDOT:PSS layer for the electrons injection and release play important role in the state switching [25][26][27]. In addition, the oxidation and the reduction of the PEDOT:PSS layer for the electrons injection and release play important role in the state switching [25][26][27].…”

Bistable electrical switching and nonvolatile memory effect in mixed composite of oxadiazole acceptor and carbazole donor

“…In D-A mixed composites materials for memory device applications, the reported acceptor materials included gold nanoparticle [5][6][7][8][9], silver nanoparticle [10], graphene [11], carbon nanotube [12], perylene imide derivatives [13], PCBM [14], meanwhile the reported donor materials in D-A mixed composites materials is consist of poly(vinylpyrrolidone) [15], 8-hydroxyquinoline [3], carbazole [5][6][7][8][9][10][11], poly-4-vinylphenol [16], PEDOT:PSS [17,18], triphenylamine [14]. The reported mixed composites memory types included write-once-read-many times (WORM) memory [11-15, 4,19], flash memory [9,[11][12][13]18], negative differential resistance behavior [5,10], unipolar memory [20] and dynamic random access memory (DRAM) [13]. Plenty of switching mechanisms have been proposed to elucidate the resistor switching phenomena of memory devices, such as charge transfer effect [4,13,21], trapping/ de-trapping of charges [6,[10][11][12]15,22], potential barrier effect …”