Normally-Off C–H Diamond MOSFETs With Partial C–O Channel Achieving 2-kV Breakdown Voltage

Kitabayashi, Y.; Kudo, Tetsuichi; Tsuboi, Hidetoshi; Yamada, Tetsuya; Xu, Dehong; Shibata, Masanobu; Matsumura, Daiju; Hayashi, Yuya; Syamsul, Mohd; Inaba, Masafumi; Hiraiwa, Atsushi; Kawarada, Hiroshi

doi:10.1109/led.2017.2661340

Cited by 162 publications

(72 citation statements)

References 23 publications

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“…MIMS-FETs by using other metals such as Ti and Cr as the Schottky contacts were also investigated ( Figures S5 and S6, Supporting Information). [26] Compared to the MESFET, the gate leakage current of the MIMS-FET is significantly reduced due to the gate insulator. Therefore, by properly selecting the Schottky metals, zero-threshold voltage FETs with low power consumption might be developed for radio-frequency signal processing in low-power sensors applications.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

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Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Liao

Sang

Shimaoka

et al. 2019

Adv Elect Materials

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tical applications due to the high input impedance, breakdown voltage, and integration ability. Tremendous efforts have been made to achieve low subthreshold swing (SS) MOSFETs on low-dimensional materials to overcome the thermal limit of 60 mV dec −1 in conventional CMOS technology. [8][9][10] On the other hand, growing attention has also been paid to the extreme semiconductors MOSFETs based on 2DHG and 2DEG for the applications in high-power, high-frequency, and high temperature electronics. [11][12][13] However, state-of-the-art conventional MOSFETs based on low-dimensional channels such as 2DHG or 2DEG always exhibit normally on (depletion mode) behavior and show uncertainty in threshold voltage. [8][9][10][11][12][13][14][15][16] Energy-efficient normally off (enhancement mode) FETs with low SS values and tunable threshold voltage are strongly in demand from the viewpoint of energy-saving, safety aspects, gate reliability, and electronic circuit simplicity. [17] Junction FET by using p-n junction or Schottky metal gate can achieve normally off operation. [18,19] Nevertheless, many wide-bandgap semiconductors suffer from"asymmetric doping" limitation. For example, n-type dopants with shallow energy levels in diamond and stable p-type doping in ZnO are notoriously difficult. [20,21] For 2D semiconductors, p-n junctions at the MOSFET level has not been achieved yet. These bottlenecks makes inversion-type enhancement-mode MOSFETs difficult, although initial results were reported. [22] While for metal-semiconductor FETs (MES-FETs), there is an intrinsic problem of forward bias limitation. Normally off MOSFETs were reported through channel structure modification, [23] defective gate oxides, [24,25] surface treatments, [26][27][28][29] and ion implantation. [30] However, in most of the cases, the principle is based on the generation of defects, which degrade the device performance as well as the controllability. The formation of recess structure at the gate can successfully lead to normally off operation for 2DEG at the AlGaN/GaN interface, [31] but not applicable to H-terminated diamond and low-dimensional semiconductors.In this work, we propose and demonstrate the device concept of metal-insulator-metal-semiconductor FET (MIMS-FET) based on a 2DHG channel to overcome the drawbacks of MOSFET and MESFET. We show that the MIMS-FET exhibits normally off operation, low subthreshold swing ≈76 mV dec −1 , high drain current, high on/off current ratio over 10 9 , and low gate leakage. These electrical properties are thermally stable up 2D electron and hole gases (2DEG or 2DHG) based on semiconductor surface/interface or 2D materials are promising for next-generation integrated circuits and high-frequency and -power electronics. To reduce power consumption, normally off operation and low-switching-loss metal-oxide fieldeffect transistors (MOSFETs) based on 2DEG or 2DHG are highly in demand. The present methods to achieve normally off MOSFETs have various shortcomings such as reduction in carrier mobility, sacrifice of dra...

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Section: Wwwadvelectronicmatdementioning

confidence: 99%

“…[18,19] Nevertheless, many wide-bandgap semiconductors suffer from"asymmetric doping" limitation. Normally off MOSFETs were reported through channel structure modification, [23] defective gate oxides, [24,25] surface treatments, [26][27][28][29] and ion implantation. [20,21] For 2D semiconductors, p-n junctions at the MOSFET level has not been achieved yet.…”

mentioning

confidence: 99%

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Liao

Sang

Shimaoka

et al. 2019

Adv Elect Materials

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“…Diamond is known as the ultimate semiconductor for its various excellent physical and chemical properties, such as high room‐temperature thermal conductivity (2200 W/mK), high carrier mobilities (3800 and 4500 cm 2 /Vs for hole and electron, respectively), high radiation hardness, high breakdown field strength (>10 MV/cm), and low dielectric constant (5.72). Based on these properties, diamond has been used to fabricate power field‐effect transistors, power Schottky diodes, solar blind ultraviolet detectors, and radiation detectors . Recently, several groups have sought to investigate the application potential of diamond semiconductor in voltaic power sources.…”

Section: Introductionmentioning

confidence: 99%

Effect of americium‐241 source activity on total conversion efficiency of diamond alpha‐voltaic battery

Liu

Ralchenko

et al. 2019

Int J Energy Res

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Summary High‐quality diamond intrinsic layer was epitaxially grown on a IIb‐type boron‐doped diamond substrate. The quality of the epitaxy layer was evaluated by Raman spectroscopy and cross‐polarizer images and compared with other samples. The dark current of the diode was analyzed, revealing a rectification ratio as high as 2 × 109 at ±7 V. Current‐voltage characteristics of the converter under the irradiation of different americium‐241 activity sources were investigated. A maximum total conversion efficiency (ηtotal) of 1.41%, short‐circuit current (Isc) of 6.68 nA/cm2, and open‐circuit voltage (Voc) of 1.06 V from the diamond alpha‐voltaic battery were obtained under the irradiation of an americium‐241 source with a source activity of 8.85 μCi/cm2. The trend for the battery parameters with the increase in the activity of the americium‐241 source was clarified. Parameters Isc and Voc increase with the increase in the radioactive source activity. The ηtotal increases with the increase in the source activity but fluctuates in a certain activity interval with an increase in the fill factor, and then decreases with the increase in radioactive source activity. The research results are significant for the design of nuclear batteries.

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“…For example, p‐channel MOSFETs based on H‐diamond showed the drain current density larger than 1.0 A mm −1 and a low on‐resistance of 4 Ω mm compared with AlGaN/GaN high electron mobility transistors (HEMTs). The H‐diamond MOSFETs were able to be operated with a breakdown voltage reaching 2 kV …”

Section: Introductionmentioning

confidence: 99%

Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors Based on 2D Hole Gas

Yang

Sang

Liao

et al. 2019

Physica Status Solidi (a)

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Recent marked advances in diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) have raised the issue of gate reliability. Herein, the threshold voltage stability of MOSFETs based on hydrogen-terminated diamond surface conductivity is examined. The electrical output characteristic curves are characterized by cyclic gate sweeping from reverse to forward gate bias (RF) and from forward to reverse gate bias (FR), respectively. The characteristics of drain current versus drain voltage are affected by the gate bias sweeping direction. Marked hysteresis is also observed in the transfer curves for the RF and FR gate sweeping. The different gate sweeping directions induce threshold voltage variation and hole mobility change. The facts that 1) no extra interface states are generated due to gate sweeping and 2) the trapped charge density depends on the gate oxide thickness, reveal that charge trapping occurs at the border of the gate oxide.

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Normally-Off C–H Diamond MOSFETs With Partial C–O Channel Achieving 2-kV Breakdown Voltage

Cited by 162 publications

References 23 publications

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Effect of americium‐241 source activity on total conversion efficiency of diamond alpha‐voltaic battery

Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors Based on 2D Hole Gas

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