Normally-off GaN HEMT for high power and high-frequency applications

Musa, Auwalu; Isa, M. Mohamad; Ahmad, N.; Taking, S.; Musa, F. A. S.

doi:10.1063/5.0056137

Cited by 2 publications

(2 citation statements)

References 21 publications

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“…Among them, GaN has been by far the most widely explored material in solid-state lighting applications [6]. The most stable wurtzite-phase GaN is a direct band gap (E g = 3.4 eV) semiconductor, and the wide gap allows a high breakdown field that is critical in developing high-power electronic devices [7,8]. Despite extensive theoretical and experimental studies devoted to bulk GaN [9][10][11][12], relatively little is known about the atomically thin two-dimensional (2D) GaN [13].…”

Section: Introductionmentioning

confidence: 99%

Many-Body Calculations of Excitons in Two-Dimensional GaN

Zhang

2023

Crystals

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We present an ab initio study on quasiparticle (QP) excitations and excitonic effects in two-dimensional (2D) GaN based on density-functional theory and many-body perturbation theory. We calculate the QP band structure using GW approximation, which generates an indirect band gap of 4.83 eV (K→Γ) for 2D GaN, opening up 1.24 eV with respect to its bulk counterpart. It is shown that the success of plasmon-pole approximation in treating the 2D material benefits considerably from error cancellation. On the other hand, much better gaps, comparable to GW ones, could be obtained by correcting the Kohn–Sham gap with a derivative discontinuity of the exchange–correlation functional at much lower computational cost. To evaluate excitonic effects, we solve the Bethe–Salpeter equation (BSE) starting from Kohn–Sham eigenvalues with a scissors operator to open the single-particle gap. This approach yields an exciton binding energy of 1.23 eV in 2D GaN, which is in good agreement with the highly demanding GW-BSE results. The enhanced excitonic effects due to reduced dimensionality are discussed by comparing the optical spectra from BSE calculations with that by random-phase approximation (RPA) for both the monolayer and bulk GaN in wurtzite phase. Additionally, we find that the spin–orbit splitting of excitonic peaks is noticeable in 2D GaN but buried in the bulk crystal.

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Section: Introductionmentioning

confidence: 99%

Many-Body Calculations of Excitons in Two-Dimensional GaN

Zhang

2023

Crystals

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“…Recently, the introduction of GaN-on-SOI (GoS) process [5] have enabled a monolithic integration of p-GaN (normally-OFF or Enhancement-mode) along with the conventional GaN devices, similarly to CMOS process. This technology have been introduced in the perspective: 1) to implement GaN based integrated circuits (GaN-ICs) [6] 2) to build power management units and 3) to get more energy efficient operation of power electronic systems [7].…”

Section: Introductionmentioning

confidence: 99%

Enhancement-mode p-GaN Comparators for power applications

Pozo

Prócel

Trojman

2023

2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)

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This paper presents the design of three new comparators circuits for power applications using Enhancementmode p-GaN HEMT Process Design Kit (PDK) developed by IMEC. The design challenge in this technology is the lack of P-type devices, therefore diode-connected structures with Ntype devices are introduced as pull-up devices. Comparators are monolithicaly integrated with 200V/10A power p-GaN HEMTs. The output voltage of the comparators is set to 6V to turn-on the power device suitably. To verify the performance of the circuits, 1MHz of input signal frequency is selected. Relevant parameters such as rising, falling and propagation delay times, together with the power-delay product are discussed. For rated output voltage and frequency, the lower rise/fall/propagation delay times achieved are 0.83/0.89/1.14 ns. Transistor-level simulations and proof of concept of each proposed structure are carried out considering temperature and frequency variation.

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Normally-off GaN HEMT for high power and high-frequency applications

Cited by 2 publications

References 21 publications

Many-Body Calculations of Excitons in Two-Dimensional GaN

Many-Body Calculations of Excitons in Two-Dimensional GaN

Enhancement-mode p-GaN Comparators for power applications

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