Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiN<sub><i>x</i></sub> Passivation and High-Temperature Gate Recess

Shi, Yanling; Huang, Sen; Bao, Qilong; Wang, Xinhua; Ke, Wei; Jiang, Haojie; Li, Junfeng; Zhao, Chao; Li, Shuiming; Zhou, Yu; Gao, Hongwei; Sun, Qian; Yang, Hui; Zhang, Jinhan; Chen, Wanjun; Zhou, Qi; Zhang, Bo; Liu, Xinyu

doi:10.1109/ted.2015.2510630

Cited by 91 publications

(27 citation statements)

References 28 publications

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“…One is the partially recessed‐gate MIS‐HEMT structure with a residual thin AlGaN barrier under the gate dielectric. [ 47,48 ] Another is the fully recessed‐gate MIS‐FET structure, also called a hybrid MOS‐HFET, since the 2DEG will penetrate the dielectric to connect either side of the recess when the device turns on. [ 49,50 ] As a result, the V th and R on of the MIS‐FET are both higher than the MIS‐HEMT structure.…”

Section: Gan‐based Hemt Power Device Structures—normally‐on and Normamentioning

confidence: 99%

Recent Advances in GaN‐Based Power HEMT Devices

Cheng

Wang

et al. 2021

Adv Elect Materials

135

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The ever‐increasing power density and operation frequency in electrical power conversion systems require the development of power devices that can outperform conventional Si‐based devices. Gallium nitride (GaN) has been regarded as the candidate for next‐generation power devices to improve the conversion efficiency in high‐power electric systems. GaN‐based high electron mobility transistors (HEMTs) with normally‐off operation is an important device structure for different application scenarios. In this review, an overview of a series of effective approaches to improve the performance of GaN‐based power HEMT devices is given. Modified epistructures are presented to suppress defects and current leakage, and low‐damage recess‐free processes are discussed in fabricating normally‐off HEMTs. Possible effects of dielectrics on a metal–insulator–semiconductor (MIS) structure are also intensively introduced. Metal/semiconductor contact engineering is investigated, and fabrication of Au‐free ohmic contact and graphene insertion layer to enhance the device performance is emphasized. Finally, the effects of field plates are studied through the use of simulated and fabricated devices.

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Section: Gan‐based Hemt Power Device Structures—normally‐on and Normamentioning

confidence: 99%

Recent Advances in GaN‐Based Power HEMT Devices

Cheng

Wang

et al. 2021

Adv Elect Materials

135

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“…Metal-Insulator-Semiconductor (MIS) is widely used in AlGaN/GaN HEMTs gate structure engineering for its capacity to achieve low gate leakage current. Besides, Si3N4 material is employed as the gate dielectric and passivation layer [14], [15]. It is generally known that the E-Field peak at the gate or drain edge is the significant cause of the device's avalanche breakdown.…”

Section: Device Structure and Analytical Modelmentioning

confidence: 99%

“…By substituting Eq. (15) and (16) into Eq. (7) at y=0, the partial differential function can be derived as Eq.…”

Section: Si3n4mentioning

confidence: 99%

Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates

Liu

Guo

Zhang

et al. 2020

IEEE J. Electron Devices Soc.

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The breakdown voltage model of Si-substrated AlGaN/GaN HEMTs with gate and drain field plates is proposed in this work. The silicon substrate and GaN buffer are considered as the depletion region in the modeling process. The analytical model shows great simplicity and veracity. It gives physical insights into the breakdown characteristics of the AlGaN/GaN HEMTs. The avalanche breakdown occurs at the field plate's edge in lateral structure or at the interface in vertical structure. According to the analytical model, the relationship between the lateral breakdown and the vertical breakdown is demonstrated in this work. The breakdown location is affected by the variation of the structure parameters, including gate-to-drain distance, buffer thickness and field plates' lengths. With the aid of the analytical model, effective guidance for device optimization to achieve high performance can be obtained. Index Terms-AlGaN/GaN HEMTs, gate and drain field plates, analytical model, breakdown voltage.

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“…Especially, the devices with metal-oxide-semiconductor structure (e.g. GaN MOS-HEMTs) are more invested due to their high threshold voltage, and large gate swing voltage [3,4]. In order to realize the rapid development of GaN MOS-HEMTs, a compact physics-based model for the threshold voltage of GaN MOS-HEMTs is highly demanded [5].…”

Section: Introductionmentioning

confidence: 99%

Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT

Shi

Chen

et al. 2021

IEEE J. Electron Devices Soc.

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In this work, the influence of the acceptor-type trap on the threshold voltage and short-channel effect is analyzed and modeled for the short-channel GaN MOS-HEMT. Particularly, the analysis and modeling are carried out with the dependences of the traps' ionization condition on the gate voltage and drain voltage considered. From the calculated results based on the proposed threshold voltage model, it is found that both the interface acceptor-type trap and buffer acceptor-type trap play a vital role in the threshold voltage reduction for the short-channel AlGaN/GaN MOS-HEMT, due to the acceptor-type trap's detrapping effect induced by the drain voltage. The calculated results are well supported by the numerical simulation, which verified the correctness and accuracy of the presented model. Index Terms-GaN MOS-HEMT, short-channel effect threshold voltage, acceptor-type trap.

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Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiN_x Passivation and High-Temperature Gate Recess

Cited by 91 publications

References 28 publications

Recent Advances in GaN‐Based Power HEMT Devices

Recent Advances in GaN‐Based Power HEMT Devices

Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates

Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT

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Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess

Cited by 91 publications

References 28 publications

Recent Advances in GaN‐Based Power HEMT Devices

Recent Advances in GaN‐Based Power HEMT Devices

Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates

Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT

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Product

Resources

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Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiN_x Passivation and High-Temperature Gate Recess