Normally-Off Schottky-Gate p-GaN HEMTs with Enhanced Irradiation Hardness

Zhou, Tianyang; Zhou, Feng; Chen, Quanyou; Lyu, Xiaofeng; Xu, Weizong; Zhou, Dong; Ren, Fangfang; Chen, Dunjun; Xia, Yuanyang; Wu, Leke; Wang, Ke; Li, Yiheng; Zhu, Tinggang; Zhang, Rong; Zheng, Youdou; Lu, Hai

doi:10.1109/ispsd59661.2024.10579580

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2024

DOI: 10.1109/ispsd59661.2024.10579580

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Normally-Off Schottky-Gate p-GaN HEMTs with Enhanced Irradiation Hardness

Tianyang Zhou,

Feng Zhou,

Quanyou Chen

et al.

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2025

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Cited by 1 publication

References 26 publications

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Highly Robust p-GaN Gate HEMT With Surge-Energy Ruggedness Under Unclamped Inductive Switching and UV Pulse Laser Irradiation

Zhou,

Zou

et al. 2025

IEEE Electron Device Lett.

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Highly Robust p-GaN Gate HEMT With Surge-Energy Ruggedness Under Unclamped Inductive Switching and UV Pulse Laser Irradiation

Zhou,

Zou

et al. 2025

IEEE Electron Device Lett.

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Normally-Off Schottky-Gate p-GaN HEMTs with Enhanced Irradiation Hardness

Cited by 1 publication

References 26 publications

Highly Robust p-GaN Gate HEMT With Surge-Energy Ruggedness Under Unclamped Inductive Switching and UV Pulse Laser Irradiation

Highly Robust p-GaN Gate HEMT With Surge-Energy Ruggedness Under Unclamped Inductive Switching and UV Pulse Laser Irradiation

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