Notice of Removal: Quasi-Single-Grain Pb(Zr,Ti)O <sub>3</sub> on Poly-Si TFT for Highly Reliable Nonvolatile Memory Device

Park, Jae Hyo; Joo, Seung Ki

doi:10.1109/tdmr.2015.2455506

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Cited by 12 publications

(1 citation statement)

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“…This Article has been retracted by the authors. The data presented in Figures 1e, 1g, 1h, 2b-d, 4a-b, 4d-e, 6a-b and 7a-b were manipulated and are duplicated in other papers 1 2 3 4 5 .…”

mentioning

confidence: 99%

Retraction Note: Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

Park¹,

Kim²,

Jang³

et al. 2016

Sci Rep

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“…This Article has been retracted by the authors. The data presented in Figures 1e, 1g, 1h, 2b-d, 4a-b, 4d-e, 6a-b and 7a-b were manipulated and are duplicated in other papers 1 2 3 4 5 .…”

mentioning

confidence: 99%

Retraction Note: Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

Park¹,

Kim²,

Jang³

et al. 2016

Sci Rep

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Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance

Park

Joo

2016

Applied Physics Letters

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A reliable on/off switching with an sub-kT/q subthreshold slope (38 mV/dec at room temperature) is experimentally demonstrated with using selectively nucleated laterally crystallized single-grain Pb(Zr,Ti)O3 (PZT) ferroelectric and ZrTiO4 paraelectric thin-film. The combination of ferroelectric and paraelectric thin-film is enabled to form a negative capacitance (NC) at the weak inversion region. However, the PZT grain-boundary easily degrades the NC properties after switching the on/off more than 108 times. It is found that the polarization of PZT is diminished from the path of grain-boundary. Here, we effectively suppress the degradation of NC MOS-FET which did not showed any fatigue even after 108 on/off switching. At the request of the authors this article is retracted due to duplication of figures and significant overlap with other publications by the authors and because of concerns about the accuracy of the description of the devices and materials from which the reported results were obtained. The authors recognize that these represent serious errors and sincerely apologize for any inconvenience they may have caused. The article is retracted from the scientific record with effect from 17 February 2017.

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Retraction: “Multibit ferroelectric field-effect transistor with epitaxial-like Pb(Zr,Ti)O3” [J. Appl. Phys. 119, 124108 (2016)]

Park

Kim

Seok

et al. 2017

Journal of Applied Physics

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Notice of Removal: Quasi-Single-Grain Pb(Zr,Ti)O ₃ on Poly-Si TFT for Highly Reliable Nonvolatile Memory Device

Cited by 12 publications

References 25 publications

Retraction Note: Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

Retraction Note: Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance

Retraction: “Multibit ferroelectric field-effect transistor with epitaxial-like Pb(Zr,Ti)O3” [J. Appl. Phys. 119, 124108 (2016)]

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Notice of Removal: Quasi-Single-Grain Pb(Zr,Ti)O 3 on Poly-Si TFT for Highly Reliable Nonvolatile Memory Device

Cited by 12 publications

References 25 publications

Retraction Note: Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

Retraction Note: Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance

Retraction: “Multibit ferroelectric field-effect transistor with epitaxial-like Pb(Zr,Ti)O3” [J. Appl. Phys. 119, 124108 (2016)]

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Notice of Removal: Quasi-Single-Grain Pb(Zr,Ti)O ₃ on Poly-Si TFT for Highly Reliable Nonvolatile Memory Device