Notizen: Zur Darstellung und Kristallstruktur von Ba2MnTe3 / Preparation and Crystal Structure of Ba2MnTe3

Matje, Peter; Müller, Wiking; Schäfer, Helmut

doi:10.1515/znb-1977-0724

Cited by 8 publications

(1 citation statement)

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“…A 500 nm long-pass filter was placed in front of the fiber optic cable to prevent ■ RESULTS AND DISCUSSION Panoramic Synthesis. The initial discovery of BaFMn 0.5 Te was made in stoichiometric reactions of the starting materials (BaF 2 , BaTe, Mn and Te) at high temperature (800 °C) and cooling to room temperature in 50 h ("blind synthesis") 49 with a yield of ∼70%, and the known ternaries BaMnF 5 50 and Ba 2 MnTe 3 51 as impurities. The differential thermal analysis (DTA) measurement indicates that BaFMn 0.5 Te melts at ∼950 °C (Figure S3).…”

Section: ■ Introductionmentioning

confidence: 99%

Antiferromagnetic Semiconductor BaFMn_0.5Te with Unique Mn Ordering and Red Photoluminescence

Chen

McClain

et al. 2019

J. Am. Chem. Soc.

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Semiconductors possessing both magnetic and optoelectronic properties are rare and promise applications in opto-spintronics. Here we report the mixed-anion semiconductor BaFMn0.5Te with a band gap of 1.76 eV and a work function of 5.08 eV, harboring both antiferromagnetism (AFM) and strong red photoluminescence (PL). The synthesis of BaFMn0.5Te in quantitative yield was accomplished using the “panoramic synthesis” technique and synchrotron radiation to obtain the full reaction map, from which we determined that the compound forms upon heating at 850 °C via an intermediate unknown phase. The structure refinement required the use of a (3+1)-dimensional superspace group Cmme(α01/2)0ss. The material crystallizes into a ZrCuSiAs-like structure with alternating [BaF]+ and [Mn0.5Te]− layers and has a commensurately modulated structure with the q-vector of 1/6a* + 1/6b* + 1/2c* at room temperature arising from the unique ordering pattern of Mn2+ cations. Long-range AFM order emerges below 90 K, with two-dimensional short-range AFM correlations above the transition temperature. First-principles calculations indicate that BaFMn0.5Te is an indirect band gap semiconductor with the gap opening between Te 5p and Mn 3d orbitals, and the magnetic interactions between nearest-neighbor Mn2+ atoms are antiferromagnetic. Steady-state PL spectra show a broad strong emission centered at ∼700 nm, which we believe originates from the energy manifolds of the modulated Mn2+ sublattice and its defects. Time-resolved PL measurements reveal an increase in excited-state lifetimes with longer probe wavelengths, from 93 ns (at 650 nm) to 345 ns (at 800 nm), and a delayed growth (6.5 ± 0.3 ns) in the kinetics at 800 nm with a concomitant decay (4.1 ± 0.1 ns) at 675 nm. Together, these observations suggest that there are multiple emissive states, with higher energy states populating lower energy states by energy transfer.

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Section: ■ Introductionmentioning

confidence: 99%

Antiferromagnetic Semiconductor BaFMn_0.5Te with Unique Mn Ordering and Red Photoluminescence

Chen

McClain

et al. 2019

J. Am. Chem. Soc.

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ChemInform Abstract: Darstellung und Kristallstruktur von Ba₂MnTe₃.

Matje¹,

Mueller²,

Schaefer³

1977

Chemischer Informationsdienst

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Synthesis and Structural Characterization of Ba2CdTe3

Wang

DiSalvo

1999

Journal of Solid State Chemistry

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Notizen: Zur Darstellung und Kristallstruktur von Ba₂MnTe₃ / Preparation and Crystal Structure of Ba₂MnTe₃

Abstract: Ba2MnTe3 has been prepared and analytically and structurally characterized. It crystallizes orthorhombic with a = 972(2) pm, b = 473(1) pm, c = 1898(4) pm, Pnma and is isotypic to Ba2MnS3 and Ba2MnSe3.

Cited by 8 publications

References 0 publications

Antiferromagnetic Semiconductor BaFMn_0.5Te with Unique Mn Ordering and Red Photoluminescence

Antiferromagnetic Semiconductor BaFMn_0.5Te with Unique Mn Ordering and Red Photoluminescence

ChemInform Abstract: Darstellung und Kristallstruktur von Ba₂MnTe₃.

Synthesis and Structural Characterization of Ba2CdTe3

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Notizen: Zur Darstellung und Kristallstruktur von Ba2MnTe3 / Preparation and Crystal Structure of Ba2MnTe3

Abstract: Ba2MnTe3 has been prepared and analytically and structurally characterized. It crystallizes orthorhombic with a = 972(2) pm, b = 473(1) pm, c = 1898(4) pm, Pnma and is isotypic to Ba2MnS3 and Ba2MnSe3.

Cited by 8 publications

References 0 publications

Antiferromagnetic Semiconductor BaFMn0.5Te with Unique Mn Ordering and Red Photoluminescence

Antiferromagnetic Semiconductor BaFMn0.5Te with Unique Mn Ordering and Red Photoluminescence

ChemInform Abstract: Darstellung und Kristallstruktur von Ba2MnTe3.

Synthesis and Structural Characterization of Ba2CdTe3

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Notizen: Zur Darstellung und Kristallstruktur von Ba₂MnTe₃ / Preparation and Crystal Structure of Ba₂MnTe₃

Antiferromagnetic Semiconductor BaFMn_0.5Te with Unique Mn Ordering and Red Photoluminescence

Antiferromagnetic Semiconductor BaFMn_0.5Te with Unique Mn Ordering and Red Photoluminescence

ChemInform Abstract: Darstellung und Kristallstruktur von Ba₂MnTe₃.