Novel 0D/1D ZnBi2O4/ZnO S-scheme photocatalyst for hydrogen production and BPA removal

Rational Construction of a 0D/1D S-Scheme CeO2/CdWO4 Heterojunction for Photocatalytic CO2 Reduction and H2 Production

“…The flat band potentials ( E FB ) of pristine CdWO 4 and CeO 2 semiconductors were estimated via M-S analysis . The M-S plots of both CdWO 4 and CeO 2 samples revealed a positive slope, which is characteristic of n-type semiconductors .…”

“…The flat band potentials (E FB ) of pristine CdWO 4 and CeO 2 semiconductors were estimated via M-S analysis. 71 The M-S plots of both CdWO 4 and CeO 2 samples revealed a positive slope, which is characteristic of n-type semiconductors. 72 Accordingly, E FB values of CdWO 4 and CeO 2 were calculated to be −0.12 and − 0.67 eV vs Ag/AgCl (∼ +0.08 eV and −0.47 eV vs NHE), respectively (Figure 6c,d).…”

Insight into the enhanced photocatalytic activity mechanism of the Ag3VO4/CoWO4p–n heterostructure under visible light

“…Meanwhile, CoWO 4 shifted upward and Ag 3 VO 4 shifted downward, accompanied by the Fermi level shifting until the Fermi level reached an energetic equilibrium. 57 Therefore, the p–n heterostructure with a staggered band alignment and an interfacial electric field between the Ag 3 VO 4 and the CoWO 4 formed, boosting the significant enhancement in the migration and separation of electron–hole pairs.…”

“…The heterostructure formation results in electron rearrangement of the composites owing to the different Fermi energy levels that will equilibrate in coupling of two semiconductors. 55 It was obvious that a new electron 57 Therefore, the p-n heterostructure with a staggered band alignment and an interfacial electric field between the Ag 3 -VO 4 and the CoWO 4 formed, boosting the significant enhancement in the migration and separation of electronhole pairs. According to the aforementioned experimental and theoretical results, a possible photocatalytic mechanism was proposed, as shown in Fig.…”

Z‐scheme CuSbS2/ZnO Heterojunction for Enhanced Photocatalytic Degradation of RhB

“…The Mott-Schottky plots were used to study the flat band potentials of pure CAS and ZnO (as shown in Figure 8a and b). The results reveal the flat band potentials of are À 0.12 eV and 0.85 eV of ZnO and CAS, respectively, and a positive slope of ZnO, confirmed to be an n-type semiconductor [37] , and a negative slope of CAS, identified as a p-type semiconductor [38] . Usually, the E CB of an n-type semiconductor is 0.1-0.3 V lower than the flat band potential and the E VB of p-type semiconductor is 0.1-0.3 V higher than the flat band potential [39] .…”