2021
DOI: 10.1049/ell2.12192
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Novel 1064 nm DBR lasers combining active layer removal and surface gratings

Abstract: The fabrication and characterisation details of novel distributed Bragg reflector (DBR) diode lasers emitting around 1064 nm are presented here. The AlGaAs epitaxial layer stack used here allows the removal of the active quantum wells in passive sections where no current is injected. The DBR lasers fabricated with a two‐step epitaxial approach without an active layer in the grating sections show improved performance in terms of power, efficiency, and linewidth in comparison to its all‐active DBR counterparts.

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Cited by 4 publications
(4 citation statements)
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“…The device studied here resembles the one presented in Ref. [60], where an intrinsic linewidth of 4 kHz at an output power of 73 mW was reported. Experimentally, the intrinsic linewidth is determined from the plateau of the frequency noise spectrum, as in the theory [61].…”
Section: Numerical Results For a Dbr Lasermentioning
confidence: 74%
“…The device studied here resembles the one presented in Ref. [60], where an intrinsic linewidth of 4 kHz at an output power of 73 mW was reported. Experimentally, the intrinsic linewidth is determined from the plateau of the frequency noise spectrum, as in the theory [61].…”
Section: Numerical Results For a Dbr Lasermentioning
confidence: 74%
“…The calculated peak reflectivity of 24% was in correspondence with the values determined from an analysis of the power–current characteristics of a DBR laser with a nominally identical Bragg grating. [ 10 ] The slope of the Bragg‐grating phase was (−35 ± 4) rad nm −1 which resulted in Δ f = (5.7 ± 0.1) GHz within the reflection band. The uncertainty of the phase slope was estimated by simulating different groove widths and etch depths for surface Bragg gratings that had peak reflectivities in the range between 0.1 and 0.4.…”
Section: Methodsmentioning
confidence: 99%
“…We manufactured the device using selective active layer removal to create a monolithic active–passive waveguide utilizing a two‐step epitaxy. [ 10 ] The main challenge of this process is to minimize the generation of lattice defects and impurities such as oxides on the wafer surface which is subsequently overgrown in a second epitaxy. While selective active layer removal is a mature technology in indium gallium arsenide phosphide based lasers emitting at 1.3 or 1.55 µm, it is more difficult to carry out at wavelengths of 1064 nm and below.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, ECDL has been implemented on a single GaAs chip as a monolithic ECDL (mECDL) . Such a device requires a two-step epitaxy technology to form an active region and a low-loss passive region.…”
Section: Introductionmentioning
confidence: 99%