Novel Accumulation Mode Superjunction Device With Extended Superjunction Gate

Machine Learning-Based Figure of Merit Model of SIPOS Modulated Drift Region for U-MOSFET

“…Nonetheless, MOSFETs with SIPOS terminations have demonstrated resilience under harsh conditions, such as a gradient of 10 kV/μs. In Figure 9 b, a comparison of the R ON , sp and BV relationships is presented for the three structures, including references [ 2 , 3 , 17 , 21 , 22 , 23 , 24 , 25 ]. Optimum t OX , W N , L D , and N D values for SSJ-UMOS and S-UMOS are chosen for this analysis.…”

“…The superjunction (SJ) theory, utilizing a vertical P-N junction in the drift region, has been widely adopted in the design of vertical discrete power MOSFETs rated from 300 V to 1000 V. This approach achieves notably low specific ON resistance ( R ON , sp ) and high breakdown voltage (BV), surpassing the conventional MOSFET silicon limit defined by R ON , sp = 8.3 × 10 −9 BV 2.5 [ 1 ]. To further optimize performance, integrating a deep trench and an extended gate offers potential R ON , sp reduction by minimizing device pitch and inducing an accumulation layer [ 2 , 3 , 4 ]. However, this improvement is hindered by the diminishing electric field (E-field) beneath the trench, and blocking voltage faces limitations due to charge balance issues [ 5 , 6 ].…”