Novel AlGaN/GaN dual-field-plate FET with high gain, increased linearity and stability

Ando, Yasuhisa; Wakejima, Akio; Okamoto, Yasuhiro; Nakayama, Tatsuo; Ota, K.; Yamanoguchi, Katsumi; Murase, Yasuhiro; Kasahara, K.; Matsunaga, K.; Inoue, Takashi; Miyamoto, Hiroyuki

doi:10.1109/iedm.2005.1609412

Cited by 33 publications

(20 citation statements)

References 10 publications

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“…This amplifier successfully delivered record high CW output power of 416 W [7]. Good linearity with 1M3 less than 50 dBc at 63 W output power, which is good enough for practical use in COMA base station, was also realized by using digital pre-distortion circuit [6].…”

Section: Recent Progress In Power Amplifersmentioning

confidence: 97%

“…In this structure, however, gain is slightly reduced by the increase in gate-drain capacitance. Dual field-modulation plate structure with additional source-terminated FP has been developed to reduce gate-drain capacitance [6]. Owing to reduction in feedback capacitance, this device successfully provided simultaneous improvements in linear gain and output power.…”

Section: Recent Progress In Device Performancesmentioning

confidence: 98%

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Recent progress and material issues of high power and high frequency AlGaN/GaN HFETs

Nanishi

2008

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

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Performances of AIGaN/GaN HFETs have much improved recently and very high potential of this heterostructure for high power and high frequency electronic devices has been verified. Application of new device technologies such as field plate, recessed gate, digital pre-distortion circuit and dual field plate was essential to realize such high device performances both at 2 GHz, 5GHz and 26 GHz. However, practical requirements on the quality and structure of these material systems for production of these devices are still not clear. Extensive studies on correlation between material quality and device performances were carried out under Japanese NEDO project. This paper reviews recent progress of the performances of high power and high frequency AIGaN/GaN HFETs. Then, several interesting results which suggest practical requirements on material quality and structure will be discussed based on our extensive characterization studies in terms of device performances and reliabilities.

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Section: Recent Progress In Power Amplifersmentioning

confidence: 97%

Section: Recent Progress In Device Performancesmentioning

confidence: 98%

Recent progress and material issues of high power and high frequency AlGaN/GaN HFETs

Nanishi

2008

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

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“…However, the operating voltage was 45 V in the demonstration [8] and the current collapse phenomena under high applied voltage of over 100 V were not discussed. Although the high voltage device design has been optimized for the tradeoff characteristics between the ON-resistance and the breakdown voltage in the previous work [11], the ON-resistance modulation by the current collapse was not considered.…”

Section: Introductionmentioning

confidence: 92%

“…The conductivity of the substrate also affects the electric field distribution because conductivity plays a role in the backside-FP electrode. Manuscript The FP structures are classified into four types: 1) no FP; 2) source FP; 3) gate FP; and 4) dual FP, the last being a combination of the gate FP and the source FP [8]. The ON-resistance modulation was the largest in the no-FP device, because there was no suppression of the gate-edge electric field concentration.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, in applications on wideband code division multiple access base station, the dual-FP structure [8], which is applicable to devices of several hundred volts for power electronics applications, has been demonstrated. However, the operating voltage was 45 V in the demonstration [8] and the current collapse phenomena under high applied voltage of over 100 V were not discussed.…”

Section: Introductionmentioning

confidence: 99%

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On-Resistance Modulation of High Voltage GaN HEMT on Sapphire Substrate Under High Applied Voltage

Saito

Nitta

Kakiuchi

et al. 2007

IEEE Electron Device Lett.

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The 620-V/1.4-A GaN high-electron mobility transistors on sapphire substrate were fabricated and the ON-resistance modulations caused by current collapse phenomena were measured under high applied voltage. Since the fabricated devices had insulating substrates, no field-plate (FP) effect was expected and the ON-resistance increases of these devices were larger than those on an n-SiC substrate even with the same source-FP structure. The dual-FP structure, which was a combination of gate FP and source FP, was effective in suppressing the ON-resistance increase due to minimization of the gate-edge electric field concentration. The ON-resistance after the applied voltage of 250 V decreased by twice that at low drain voltage by the dual-FP structure.Index Terms-Gallium nitride (GaN), high-electron mobility transistor (HEMT), high voltage, power semiconductor device.

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Breakdown Voltage Improvement in AlGaN/GaN HEMT by Introducing a Field Plate

Kharei

Baidya

Maity

2022

Algorithms for Intelligent Systems

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Novel AlGaN/GaN dual-field-plate FET with high gain, increased linearity and stability

Cited by 33 publications

References 10 publications

Recent progress and material issues of high power and high frequency AlGaN/GaN HFETs

Recent progress and material issues of high power and high frequency AlGaN/GaN HFETs

On-Resistance Modulation of High Voltage GaN HEMT on Sapphire Substrate Under High Applied Voltage

Breakdown Voltage Improvement in AlGaN/GaN HEMT by Introducing a Field Plate

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