2000
DOI: 10.1016/s0022-0248(00)00125-1
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Novel approach to description of optical and magnetotransport data in dilute magnetic semiconductors near semimetal–semiconductor transition

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Cited by 1 publication
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“…Since the ratio of the energy E to the band gap energy serves as the main parameter of the theory, the effect in the narrow gap semiconductor is noticeable even for the small values of E. In Fig. 3.11 taken from the paper [53], the experimental dependence of the exchange interaction parameter on the electron energy for the GaMnAs structure is compared with the results of the theoretical model [32]. This comparison demonstrates good agreement between the theory and experiment.…”
Section: Renormalization Of the Exchange Interaction Between Magneticmentioning
confidence: 67%
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“…Since the ratio of the energy E to the band gap energy serves as the main parameter of the theory, the effect in the narrow gap semiconductor is noticeable even for the small values of E. In Fig. 3.11 taken from the paper [53], the experimental dependence of the exchange interaction parameter on the electron energy for the GaMnAs structure is compared with the results of the theoretical model [32]. This comparison demonstrates good agreement between the theory and experiment.…”
Section: Renormalization Of the Exchange Interaction Between Magneticmentioning
confidence: 67%
“…Renormalization of the exchange interaction constants for the electrons with large confinement energy was observed in the papers [32,[52][53][54][55][56]. In [32], the structure based on the widegap semiconductor (CdMnTe) was investigated, while in [52,53] the narrow gap semiconductor structure (HgCdMnSe) was studied.…”
Section: Renormalization Of the Exchange Interaction Between Magneticmentioning
confidence: 99%
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