An isolated gate driver is a prime requirement to operate an IGBT/MOSFET or any electronic devices like SiC MOSFET. The paper proposes a novel gate driver circuit based on UCC21750 gate driver IC, which can drive the devices of different technologies such as si-MOSFET, SiC MOSFET, superFET MOSFET, and IGBT in the first part of the investigation. The proposed gate driver circuit can trigger the devices that operate on various gate to source(emitter) voltage $V_{GS}(V_{GE})$ because it provides a gate to source(emitter) voltage of 18V, 15V, 12V, 8V, and 5V by switching a 4-way DIP switch. The second part of the paper focuses on developing a novel hybrid Direct Current Circuit Breaker (DCCB) that can accommodate the mechanical time constant taken by the mechanical switch after the pulse is provided to the actuator or a relay. The hybrid DCCB consists of four MOSFETs driven by the proposed gate driver circuit. The proposed DCCB operates when the current through the mechanical switch is zero and provides arc-free fault clearance. A detailed analysis of the proposed DCCB and MATLAB simulation is conducted. The results are validated through appropriate hardware on 100V and 2A load using an electromechanical relay GR2G-2A-X 12VDC and a DC contactor (part no. DCNLEV100-BN) as the mechanical switch.