Novel color center platforms enabling fundamental scientific discovery

Norman, Victoria; Majety, Sridhar; Wang, Z.; Casey, William H.; Curro, N. J.; Radulaski, Marina

doi:10.1002/inf2.12128

Cited by 48 publications

(34 citation statements)

References 230 publications

(263 reference statements)

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“…The early‐stage SPE was based on single‐atom, [ 4 , 5 ] however, it suffered from drawbacks such as low efficiency and reliability. Solid‐state materials including quantum dots [ 6 , 7 ] and color centers [ 8 , 9 ] with atom‐like isolated levels are promising types of single‐photon sources due to the convenient combination with advanced technologies of the semiconductor industry. The color center, which is a kind of fluorescent defect in solid‐state material with the wavefunction localized on the atomic scale length, [ 10 ] can potentially realize single‐photon emission at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Cation Vacancy in Wide Bandgap III‐Nitrides as Single‐Photon Emitter: A First‐Principles Investigation

et al. 2021

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Single-photon sources based on solid-state material are desirable in quantum technologies. However, suitable platforms for single-photon emission are currently limited. Herein, a theoretical approach to design a single-photon emitter based on defects in solid-state material is proposed. Through group theory analysis and hybrid density functional theory calculation, the charge-neutral cation vacancy in III-V compounds is found to satisfy a unique 5-electron-8-orbital electronic configuration with T d symmetry, which is possible for single-photon emission. Furthermore, it is confirmed that this type of single-photon emitter only exists in wide bandgap III-nitrides among all the III-V compounds. The corresponding photon energy in GaN, AlN, and AlGaN lies within the optimal range for transfer in optical fiber, thereby render the charge-neutral cation vacancy in wide-bandgap III-nitrides as a promising single-photon emitter for quantum information applications.

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Section: Introductionmentioning

confidence: 99%

Cation Vacancy in Wide Bandgap III‐Nitrides as Single‐Photon Emitter: A First‐Principles Investigation

et al. 2021

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“…SiC and diamond constitute the main focus, but we will briefly mention the presence of SPEs in other materials as well. The report is not intended as an exhaustive review, and the reader is therefore directed to other reports for further information on, for example, various solid-state single-photon sources, [4,29] spin-based quantum technologies in semiconductors, [2,30] novel color centers [31,32] and…”

Section: Introductionmentioning

confidence: 99%

Manipulating Single‐Photon Emission from Point Defects in Diamond and Silicon Carbide

Bathen

Vines

2021

Adv Quantum Tech

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Point defects in semiconductors are emerging as an important contender platform for quantum technology (QT) applications, showing potential for quantum computing, communication, and sensing. Indeed, point defects have been employed as nuclear spins for nanoscale sensing and memory in quantum registers, localized electron spins for quantum bits, and emitters of single photons in quantum communication and cryptography. However, to utilize point defects in semiconductors as single-photon sources for QT, control over the influence of the surrounding environment on the emission process must be first established. Recent works have revealed strong manipulation of emission energies and intensities via coupling of point defect wavefunctions to external factors such as electric fields, strain and photonic devices. This review presents the state-of-the-art on manipulation, tuning, and control of single-photon emission from point defects focusing on two leading semiconductor materials-diamond and silicon carbide.

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“…Silicon carbide, aluminum nitride, zinc oxide, zinc sulfide, hexagonal boron nitride are also now among the most promising host materials. [12,44] Most color centers are very bright single-photon emitters. The maximum single-photon photoluminescence rate is typically of the order of 10 8 cps under optical excitation, although only a few percents of emitted photons are typically detected by a photodetector due to the very low collection efficiency of experimental setups, which is limited by the total internal reflection at the semiconductor-air interface due to the high refractive index of wide-bandgap semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Optoelectronics of Color Centers in Diamond and Silicon Carbide: From Single‐Photon Luminescence to Electrically Controlled Spin Qubits

Fedyanin

2021

Adv Quantum Tech

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Color centers in diamond, silicon carbide, and related materials have recently emerged as one of the most promising platforms for quantum technology applications. These optically active point defects in the crystal lattice demonstrate outstanding optical and spin properties at room and even higher temperatures, which can hardly be achieved using other quantum systems. For a long time, the host material was considered only as a mechanical carrier of color centers, and the fact that it is a semiconductor and, therefore, can contain high densities of electrons and holes, was ignored. However, recent studies have demonstrated that color centers can exchange electrons and holes with the valence or conduction bands of the host material, which enables novel functionalities, ranging from ultrabright electrically driven single-photon sources to protected quantum memories. This review summarizes recent advances in understanding this interaction.

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Novel color center platforms enabling fundamental scientific discovery

Cited by 48 publications

References 230 publications

Cation Vacancy in Wide Bandgap III‐Nitrides as Single‐Photon Emitter: A First‐Principles Investigation

Cation Vacancy in Wide Bandgap III‐Nitrides as Single‐Photon Emitter: A First‐Principles Investigation

Manipulating Single‐Photon Emission from Point Defects in Diamond and Silicon Carbide

Optoelectronics of Color Centers in Diamond and Silicon Carbide: From Single‐Photon Luminescence to Electrically Controlled Spin Qubits

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