ISPS'23 Proceedings 2023
DOI: 10.14311/isps.2023.024
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Novel Constant Surface Concentration Depletion Mechanism and Its Experiments in Homogenization field LDMOS

Wentong Zhang,
Shiyao Cai,
Lingying Wu
et al.

Abstract: A novel constant surface concentration depletion (CSD) mechanism for the homogenization field (HOF) LDMOS is proposed and experimentally demonstrated in this paper. Because the depletion of the HOF LDMOS is independent on the P-substrate, the surface doping concentration of the HOF LDMOS can keep constant and thus the total doping dose of the N-drift region can increase with the junction and trench depths. Based on the CSD mechanism, a CSD HOF LDMOS with 15 μm trench depth was designed and experimentally fabri… Show more

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