Perforated
turbostratic graphene (PTG) sheets have been synthesized
from a natural waste material, dead bougainvillea bracts, using a
single-step pyrolysis method, and a resistive switching (RS) memory
device has been constructed with it for the very first time. Herein,
the edges of these large-area multilayer graphene sheets are highly
conducting due to the turbostratic stacking between the adjacent layers
of the graphene sheets. These highly conducting PTG sheets embedded
inside an insulating polymer matrix can act as an active layer for
resistive switching memory devices. This hybrid structure shows nonlinear
resistance change between two distinct resistance states by simple
bias voltage variation. The trap-assisted space-charge-limited conduction
can realize the high resistive state (HRS), whereas the low resistive
state (LRS) takes place through direct conduction. To achieve the
best performing device, a number of optimizations have been performed,
like the variation of polymer matrices, variation of PTG and polymer
concentration, active layer thickness variation, and top electrode
area variation. The best performing device showed reproducibility
of current–voltage data (>200 cycles), low power consumption
(SET voltage <1 V), a high ON/OFF ratio (>104), a
long
retention time (>104 s), and a large number of endurance
cycles (>103). High writing-read-erase-read speed and
flexibility/bending
cycle tests were also carried out on the best-performing device to
examine its tenacity. The current PTG-based flexible RS memory device
derived from a biowaste, dead bougainvillea bracts, can provide an
important step toward developing green electronics.