IEEE EUROCON 2017 -17th International Conference on Smart Technologies 2017
DOI: 10.1109/eurocon.2017.8011109
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Novel current limit circuitry for LDOs

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Cited by 5 publications
(1 citation statement)
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“…The negative and positive terminals of the comparator connect to a temperature-independent voltage reference and a thermal-dependent circuit, respectively. The thermal-dependent circuit may use a diode-connected bipolar junction transistor whose base-to-emitter voltage is complementary to absolute temperature (CTAT) [19] or a bandgap comparator that includes a proportional-toabsolute-temperature (PTAT) voltage reference [20,21,22]. In addition, GaN-on-Si Schottky Barrier Diodes (SBD) can also provide a PTAT voltage for thermal shutdown function [23].…”
Section: Introductionmentioning
confidence: 99%
“…The negative and positive terminals of the comparator connect to a temperature-independent voltage reference and a thermal-dependent circuit, respectively. The thermal-dependent circuit may use a diode-connected bipolar junction transistor whose base-to-emitter voltage is complementary to absolute temperature (CTAT) [19] or a bandgap comparator that includes a proportional-toabsolute-temperature (PTAT) voltage reference [20,21,22]. In addition, GaN-on-Si Schottky Barrier Diodes (SBD) can also provide a PTAT voltage for thermal shutdown function [23].…”
Section: Introductionmentioning
confidence: 99%