Novel DC-Contact MEMS Shunt Switches and High-Isolation Series/Shunt Designs

Muldavin, Jeremy; Rebeiz, Gabriel M.

doi:10.1109/euma.2001.339131

Cited by 8 publications

(4 citation statements)

References 9 publications

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“…The switch OFF-state capacitance (C off ) has been found from the isolation response (S 21 ), as given in [55]…”

Section: Analysis and Measurement Of Switch Lossmentioning

confidence: 99%

“…The ON-state resistance is the summation of transmission line resistance and contact resistance (R c ). The contact resistance has been found from switch ON-state return loss (S 11 ), as given in [55]:…”

Section: Analysis and Measurement Of Switch Lossmentioning

confidence: 99%

“…The parameters ε and β depend on signal frequency and power. β can be expressed by the following equation [55]:…”

Section: Imd Of Mems Switch and Power Handling Capabilitymentioning

confidence: 99%

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Design and development of a CPW-based 5-bit switched-line phase shifter using inline metal contact MEMS series switches for 17.25 GHz transmit/receive module application

Dey¹,

Koul²

2013

J. Micromech. Microeng.

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A radio frequency micro-electro-mechanical system (RF-MEMS) phase shifter based on switchable delay line concept with maximum desirable phase shift and good reliability is presented in this paper. The phase shifter is based on the switchable reference and delay line configurations with inline metal contact series switches that employs MEMS systems based on electrostatic actuation and implemented using coplanar waveguide (CPW) configuration. Electromechanical behaviour of the MEMS switch has been extensively investigated using commercially available simulation tools and validated using system level simulation. A detailed design and performance analysis of the phase shifter has been carried out as a function of various structural parameters with reference to the gold-based surface micromachining process on alumina substrate. The mechanical, electrical, transient, intermodulation distortion (IMD) and loss performance of an MEMS switch have been experimentally investigated. The individual primary phase-bits (11.25°/22.5°/45°/90°/180°) that are fundamental building blocks of a complete 5-bit phase shifter have been designed, fabricated and experimentally characterized. Furthermore, two different 5-bit switched-line phase shifters, that lead to 25% size reduction and result in marked improvement in the reliability of the complete 5-bit phase shifter with 30 V actuation voltage, have been developed. The performance comparison between two different CPW-based switched-line phase shifters have been extensively investigated and validated. The complete 5-bit phase shifter demonstrates an average insertion loss of 5.4 dB with a return loss of better than 14 dB at 17.25 GHz. The maximum phase error of 1.3° has been obtained at 17.25 GHz from these 5-bit phase shifters.

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“…The switch OFF-state capacitance (C off ) has been found from the isolation response (S 21 ), as given in [55]…”

Section: Analysis and Measurement Of Switch Lossmentioning

confidence: 99%

Section: Analysis and Measurement Of Switch Lossmentioning

confidence: 99%

See 1 more Smart Citation

Design and development of a CPW-based 5-bit switched-line phase shifter using inline metal contact MEMS series switches for 17.25 GHz transmit/receive module application

Dey¹,

Koul²

2013

J. Micromech. Microeng.

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show abstract

“…Segundo Muldavin (2001), a corrente de RF é transportada na borda dos condutores da linha CPW em freqüências de microondas. Essa situação pode ser visualizada claramente no diagrama de densidade de corrente da linha CPW mostrado na Figura 2.11, realizado via software Sonnet.…”

Section: Indutânciaunclassified

Mems-PCB

Silva¹

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A mente que se abre a uma nova idéia jamais volta ao seu tamanho original." Albert Einstein v Dedico este trabalho aos meus pais Amaro Maurício e Vera Lúcia e meus irmãos Éricka Aline e Bruno Davis que são a minha história e minha vida vi ResumoO desenvolvimento de chaves MEMS (Micro Electro Mechanical System) de RF, usando os conceitos e a tecnologia de placa de circuito impresso (PCB) é objeto desta pesquisa. Foram fabricadas micro-chaves na configuração paralela, sobre guias de onda coplanares (CPW). Recentemente, suas aplicações vêm sendo direcionadas a circuitos mais sofisticados, onde são monoliticamente integrados com outros componentes de RF, como antenas e deslocadores de fase.As chaves desenvolvidas são projetadas para operar com baixa tensão de ativação, e fabricadas usando a técnica surface micromachining, que consiste em construir as estruturas em camadas de filmes finos, e removendo as camadas sacrificiais até a liberação da parte flexível do dispositivo.Neste trabalho é apresentada toda a metodologia do projeto, incluindo as simulações eletromecânicas e eletromagnéticas das chaves MEMS em PCB, bem como as caracterizações. As chaves mostraram desempenho compatível com dispositivos equivalentes comerciais de RF, apresentando larga banda de operação de 1,8 -18 GHz. Tendo em vista o desempenho físico e operacional dos dispositivos fabricados, essa tecnologia mostra-se viável com tecnologias dominadas localmente e se aplica tanto para Rádio Freqüência como para micro-ondas.

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Performance improvement of RF-MEMS capacitive switch via asymmetric structure design

Angira

Rangra

2014

Microsyst Technol

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Novel DC-Contact MEMS Shunt Switches and High-Isolation Series/Shunt Designs

Cited by 8 publications

References 9 publications

Design and development of a CPW-based 5-bit switched-line phase shifter using inline metal contact MEMS series switches for 17.25 GHz transmit/receive module application

Design and development of a CPW-based 5-bit switched-line phase shifter using inline metal contact MEMS series switches for 17.25 GHz transmit/receive module application

Mems-PCB

Performance improvement of RF-MEMS capacitive switch via asymmetric structure design

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