Novel Design and Fabrication of High Sensitivity MEMS Capacitive Sensor Array for Fingerprint Imaging

Damghanian, Mitra; Majlis, Burhanuddin Yeop

doi:10.4028/www.scientific.net/amr.74.239

Cited by 5 publications

(5 citation statements)

References 2 publications

(2 reference statements)

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“…Figure 16 highlights that total electric energy possesses applied pressure despite having similar layout size, with the only difference thickness of the diaphragm simulated in COMSOL 4.2 software. The expression of total electric energy is defined by (8) for the center deflections due to electrical biasing field between two electrodes responses to pressure applied on the surface of diaphragm with the input voltage remaining 1.0 Volt.…”

Section: Total Electric Energymentioning

confidence: 99%

The Mechanical and Electrical Effects of MEMS Capacitive Pressure Sensor Based 3C-SiC for Extreme Temperature

Marsi

Majlis

Hamzah

et al. 2014

Journal of Engineering

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This paper discusses the mechanical and electrical effects on 3C-SiC and Si thin film as a diaphragm for MEMS capacitive pressure sensor operating for extreme temperature which is 1000 K. This work compares the design of a diaphragm based MEMS capacitive pressure sensor employing 3C-SiC and Si thin films. A 3C-SiC diaphragm was bonded with a thickness of 380 μm Si substrate, and a cavity gap of 2.2 μm is formed between the wafers. The MEMS capacitive pressure sensor designs were simulated using COMSOL ver 4.3 software to compare the diaphragm deflection, capacitive performance analysis, von Mises stress, and total electrical energy performance. Both materials are designed with the same layout dimensional with different thicknesses of the diaphragm which are 1.0 μm, 1.6 μm, and 2.2 μm. It is observed that the 3C-SiC thin film is far superior materials to Si thin film mechanically in withstanding higher applied pressures and temperatures. For 3C-SiC and Si, the maximum von Mises stress achieved is 148.32 MPa and 125.48 MPa corresponding to capacitance value which is 1.93 pF and 1.22 pF, respectively. In terms of electrical performance, the maximum output capacitance of 1.93 pF is obtained with less total energy of 5.87 × 10−13 J, thus having a 50% saving as compared to Si.

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Section: Total Electric Energymentioning

confidence: 99%

The Mechanical and Electrical Effects of MEMS Capacitive Pressure Sensor Based 3C-SiC for Extreme Temperature

Marsi

Majlis

Hamzah

et al. 2014

Journal of Engineering

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“…The present work develops a new technique for the physical characterization of electrically insulating layers by capacitance measurement. Impedance-based sensing has found applications in the measurement or detection of liquid level [12,13], displacement [14], pressure [15,16], pH level [17,18], chemical concentration [18], polyimide curing [19], coating degradation [20,21], flow regime [22], phase distribution in multi-phase flow over a surface [23], and imaging of buried objects [24]. Capacitance-based sensing may be similarly applied for void detection in dielectric TIM layers.…”

Section: Near-field Focusing Sensor For Characterization Of Void Cont...mentioning

confidence: 99%

Near-field focusing sensor for characterization of void content in thin dielectric layers

Taylor¹,

Garimella²

2014

Meas. Sci. Technol.

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A sensor concept is developed and analyzed for in situ characterization of a thin dielectric layer.An array of long, planar electrodes is flush-mounted into opposing faces of two substrates on either side of the dielectric layer. The substrates are oriented such that the lengthwise dimensions of the opposing electrodes are orthogonal. Capacitance is measured between single electrode pairs on opposite substrates while all other electrodes are grounded. The electric field between the active electrodes is sharply focused at their crossing point, resulting in high sensitivity to void content in a square detection zone of the dielectric layer. For a fixed interfacial gap size, direct proportionality of the capacitance with void fraction within the detection zone is poor for high electrode-to-electrode spacing on the substrates, but improves dramatically as this spacing is reduced. Three methods of deriving a simulation-based sensitivity response of measured capacitance to any arbitrary two-dimensional void geometry are investigated. The best method requires data from simulations of an empty air gap and a TIM-filled gap, and uses a reduced-order superposition technique to predict the normalized capacitance value obtained for any void geometry to within 10% of that predicted by a highly-fidelity direct simulation. The sensing technique is demonstrated using manually introduced voids of 250 µm to 2000 µm diameter in a 254 µm-thick interface material layer with a dielectric constant of 4.7. The relationship of the capacitance to the void fraction is shown to fall within the predicted bounds.

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“…From this relationship, increasing or decreasing the spacing between the two plates would result in a change in capacitance. The following equation will determine the capacitance changes in a parallel plate capacitor when the electrode is deflected due to an external force [5]. and w(x,y) is the deflection of the diaphragm.…”

Section: Problem Illustrationmentioning

confidence: 99%

“…Understanding of capacitance changes in the structure requires more knowledge about mechanical deflection of an upper electrode. The behaviors of the flat clamped diaphragms are investigated using the classical Timoshenko plate theory [5,6]. Many researchers have developed small and large deflection analysis for constant thickness plates [7].…”

Section: Introductionmentioning

confidence: 99%

Analytical Analysis of Capacitive Pressure Sensor with Clamped Diaphragm

Tabarestania¹,

Ganji

2013

IJE

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In this paper, analytical analysis of capacitive pressure sensor with clamped diaphragm is presented. Mechanical and electrical properties of the sensor are theoretically analyzed based on theory of thin plates with small deflection and the results are evaluated using finite element analysis. The central deflection and capacitance values under uniform external pressure are calculated. Comparison of theoretical results shows good agreement with finite element analysis. The results indicate that the mathematical model has a high accuracy to determine the sensor behaviors.

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Novel Design and Fabrication of High Sensitivity MEMS Capacitive Sensor Array for Fingerprint Imaging

Cited by 5 publications

References 2 publications

The Mechanical and Electrical Effects of MEMS Capacitive Pressure Sensor Based 3C-SiC for Extreme Temperature

The Mechanical and Electrical Effects of MEMS Capacitive Pressure Sensor Based 3C-SiC for Extreme Temperature

Near-field focusing sensor for characterization of void content in thin dielectric layers

Analytical Analysis of Capacitive Pressure Sensor with Clamped Diaphragm

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