Novel design concept of waveguide mode adapter for low-loss mode conversion

Park, Soon Ryong; Beom‐Hoan, O

doi:10.1109/68.930411

Cited by 20 publications

(3 citation statements)

References 5 publications

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“…The active channel waveguide was 5-mm long and 0.6-1.7-lm high, which ensured fundamental-mode operation in the vertical direction, and was horizontally tapered down from 50 to 5 lm over a length of 2 mm, according to the design presented in Ref. [43]. By use of a fluorinated oil, mirrors with a reflection of 99.8 and 90 % at 1,038 nm were buttcoupled to the polished end-facets of the wide and narrow channel waveguide part, respectively.…”

Section: Spectral Properties Of Yb 31 In Co-doped Layersmentioning

confidence: 99%

Engineering lattice matching, doping level, and optical properties of KY(WO4)2:Gd, Lu, Yb layers for a cladding-side-pumped channel waveguide laser

et al. 2013

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Single-crystalline KY 1-x-y-z Gd x Lu y Yb z (WO 4 ) 2 layers are grown onto undoped KY(WO 4 ) 2 substrates by liquid-phase epitaxy. The purpose of co-doping the KY(WO 4 ) 2 layer with suitable fractions of Gd 3? and Lu 3? is to achieve lattice-matched layers that allow us to engineer a high refractive-index contrast between waveguiding layer and substrate for obtaining tight optical mode confinement and simultaneously accommodate a large range of Yb 3? doping concentrations by replacing Lu 3? ions of similar ionic radius for a variety of optical amplifier or laser applications. Crack-free layers, up to a maximum lattice mismatch of *0.08 %, are grown with systematic variations of Y 3? , Gd 3? , Lu 3? , and Yb 3? concentrations, their refractive indices are measured at several wavelengths, and Sellmeier dispersion curves are derived. The influence of co-doping on the spectroscopy of Yb 3? is investigated. As evidenced by the experimental results, the lattice constants, refractive indices, and transition crosssections of Yb 3? in these co-doped layers can be approximated with good accuracy by weighted averages of data from the pure compounds. The obtained information is exploited to fabricate a twofold refractive-index-engineered sample consisting of a highly Yb 3? -doped tapered channel waveguide embedded in a passive planar waveguide, and a cladding-side-pumped channel waveguide laser is demonstrated.

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Section: Spectral Properties Of Yb 31 In Co-doped Layersmentioning

confidence: 99%

Engineering lattice matching, doping level, and optical properties of KY(WO4)2:Gd, Lu, Yb layers for a cladding-side-pumped channel waveguide laser

et al. 2013

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“…There have been numerous approaches to optimize the design of adiabatic mode-evolution-based devices in integrated optics. For adiabatic tapers, one approach is based on the equalization of taper loss along each propagation step [16][17][18]. A similar approach is to limit the fraction of power scattered into the unwanted mode below a constant value [19].…”

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confidence: 99%

Mode-evolution-based silicon-on-insulator 3 dB coupler using fast quasiadiabatic dynamics

Hung

Chung

et al. 2019

Opt. Lett.

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We report a 2 × 2 broadband and fabrication tolerant mode-evolution-based 3 dB coupler based on silicon-oninsulator rib waveguides. The operating principle of the coupler is based on the adiabatic evolution of local eigenmodes. The key element of the device is an adiabatically tapered mode evolution region, which converts two dissimilar waveguides into two identical waveguides. Contrary to conventional designs using a linear taper function where the device adiabaticity is uneven during evolution, we use the fast quasiadiabatic approach to homogenize the adiabaticity of the device, leading to a shortcut to adiabaticity. Devices with an optimized taper region of 26.3 μm are designed and fabricated in a complementary metal-oxide-semiconductor compatible process with 193 nm deep ultraviolet lithography. The measured devices exhibit a broadband 3 dB 0.5 dB splitting within a bandwidth of 100 nm, uniformly across a 200-mm wafer, showing good tolerance against fabrication variations.

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“…In our simulations, the optical system modes for both TE and TM polarization and for wavelength λ = 1310 nm were calculated using a commercial software (Field Designer by Phoenix) based on the eigenmode expansion method. To derive the shape of the SiWG, we followed the single-step loss method for adiabatic mode transformations in waveguide adaptors proposed in [14]. In our case, the overlap between consecutive mode-field distributions was computed for every 5 nm Si-taper width step, as plotted in Fig.…”

Section: B Adiabatic Optical Coupling Simulationsmentioning

confidence: 99%

Polymer Waveguides Enabling Scalable Low-Loss Adiabatic Optical Coupling for Silicon Photonics

Dangel

Porta

Jubin

et al. 2018

IEEE J. Select. Topics Quantum Electron.

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Optically transparent polymer waveguides are employed for interfacing silicon photonics devices to fibers. The highly confined optical mode in the nanophotonic silicon waveguide is transferred to a fiber-matched polymer waveguide through adiabatic optical coupling by tapering the silicon waveguide. The polymer waveguides are either processed onto the silicon photonics wafer or bonded to individual chips. Fibers are interfaced to the polymer waveguides through butt-coupling. We show polarization and wavelength-tolerant fiber-to-chip coupling loss of less than 3.5 dB across the O-band. The polymer waveguide-to-silicon-chip alignment tolerance is 2 µm for a loss increase of only 1 dB. Reflection losses are well below −45 dB and the scalability to large numbers of channels is demonstrated. These results open a path to broadband and polarization-tolerant optical packaging of silicon photonics devices for ultrahigh bandwidth applications employing wavelength division multiplexing across multiple channels as envisioned for future data-center interconnects. Index Terms-Optical interconnections, optical waveguides, optical polymers, silicon on insulator technology, optical coupling. I. INTRODUCTIONO PTICAL interconnects (OIs) are the enabling technology to sustain the growing performance requirements of both cloud data-center servers and high-performance computers (HPCs) [1], [2]. Compared to electrical interconnects, OIs provide inherent advantages such as a larger bandwidth-distance product, a higher interconnect density, and an improved power efficiency [3].Integrated CMOS silicon (Si) photonics technology can combine optical and electrical functions on a single chip. Singlemode (SM) Si-photonics chips can be scaled to provide high bandwidth density and can cover the reach of the OIs between and within data-centers [4]. All the Si-photonics functional building blocks required for that purpose have already

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Novel design concept of waveguide mode adapter for low-loss mode conversion

Cited by 20 publications

References 5 publications

Engineering lattice matching, doping level, and optical properties of KY(WO4)2:Gd, Lu, Yb layers for a cladding-side-pumped channel waveguide laser

Engineering lattice matching, doping level, and optical properties of KY(WO4)2:Gd, Lu, Yb layers for a cladding-side-pumped channel waveguide laser

Mode-evolution-based silicon-on-insulator 3 dB coupler using fast quasiadiabatic dynamics

Polymer Waveguides Enabling Scalable Low-Loss Adiabatic Optical Coupling for Silicon Photonics

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