Novel design for high-power single-lateral-mode lasers

Huber, A.E.; Yeoh, T.S.; Swint, R.B.; Woo, Chon Young; Lee, K.E.; Roh, Sookyoung; Coleman, J. J.; Faircloth, Brian O.; Zediker, Mark S.

doi:10.1109/68.950736

Cited by 8 publications

(3 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, such a system is complicated and costly, whereas its total efficiency is quite low. Promising characteristics were demonstrated for tapered waveguide lasers, where a narrow stripe region ensures suppression of higher-order modes, whereas a lateral tapered region acts as a monolithically integrated optical amplifier [24].…”

Section: Quantum Dot Lasers With An Integrated Mode Filtermentioning

confidence: 99%

Quantum dot lasers with controllable spectral and modal characteristics

Zhukov

Maximov

Gordeev

et al. 2010

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Simple analytical expressions for the shape and width of the multi-frequency lasing spectra of quantum dot lasers are derived by using a parabolic approximation of the gain spectrum. A giant nonlinear gain coefficient of 2.5 × 10 −15 cm 3 was estimated from the experimental dependence of the lasing spectrum width on the output power. A monolithic diffraction optical filter was used to suppress lasing of higher-order transverse modes in a quantum dot laser with a relatively broad ridge waveguide. Stable lasing on a fundamental transverse mode is observed with the maximum continuous wave (CW) single-spatial-mode power of 700 mW.

show abstract

Section: Quantum Dot Lasers With An Integrated Mode Filtermentioning

confidence: 99%

Quantum dot lasers with controllable spectral and modal characteristics

Zhukov

Maximov

Gordeev

et al. 2010

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Selective area epitaxy (SAE) [ 7 , 8 , 9 ] is one of the effective approaches to the implementation of these elements, using selective growth on patterned substrates with passivating masks, which exclude growth above them and ensure growth outside (i.e., in the so-called windows). There are a number of works demonstrating the use of SAE in the fabrication of different optical devices based on various material systems, including III-V (GaAs [ 8 , 10 , 11 ], InP [ 12 , 13 , 14 , 15 , 16 , 17 ]) and III-N semiconductor compounds (GaN [ 18 ], InGaN [ 19 ]). In particular, single-mode lasers with monolithically integrated modulators [ 20 , 21 ] and couplers [ 22 , 23 ] have been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

et al. 2020

View full text Add to dashboard Cite

Selective area epitaxy (SAE) is widely used in photonic integrated circuits, but there is little information on the use of this technique for the growth of heterostructures in ultra-wide windows. Samples of heterostructures with InGaAs quantum wells (QWs) on GaAs (100) substrates with a pattern of alternating stripes (100-μm-wide SiO2 mask/100-μm-wide window) were grown using metalorganic chemical vapour deposition (MOCVD). It was found that due to a local change in the growth rate of InGaAs QW in the window, the photoluminescence (PL) spectra measured from the edge to the center of the window exhibited maximum blueshifts of 14 and 19 meV at temperatures of 80 K and 300 K, respectively. Using atomic force microscopy, we have demonstrated that the surface morphologies of structures grown using standard epitaxy or SAE under identical MOCVD growth conditions correspond to a step flow growth with a step height of ~1.5 ML or a step bunching growth mode, respectively. In the structures grown with the use of SAE, a strong variation in the surface morphology in an ultra-wide window from its center to the edge was revealed, which is explained by a change in the local misorientation of the layer due to a local change in the growth rate over the width of the window.

show abstract

“…[11] Several problems arise from the narrow geometry such as catastrophic optical mirror damage (COMD), spatial hole burning, a large diffraction angle, and limited power due to the limited gain volume, small current injecting area, and high optical intensity. [11,16] Therefore, a few novel designs for high-power single-spatial-mode lasers have been proposed. The tapered laser is one of the designs.…”

mentioning

confidence: 99%

High-Power Single-Spatial-Mode GaSb Tapered Laser around 2.0 μm with Very Small Lateral Beam Divergence

Huang

Zhang

Liu

et al. 2017

Chinese Phys. Lett.

View full text Add to dashboard Cite

We report high-power single-spatial-mode type-I GaSb-based tapered lasers fabricated on the InGaSb/AlGaAsSb material system. A straight ridge and three different tapered waveguide structures with varying flare angles are fabricated to optimize the output power and spatial-mode performance. The best devices exhibit single-spatial-mode operation with room-temperature output power up to 350 mW in continuous-wave mode at an emission wavelength around 2.0 μm with a very small far-field lateral divergence angle, which is beyond state of the art in terms of single-spatial-mode output power.

show abstract

Novel design for high-power single-lateral-mode lasers

Abstract: A new laser design for single-mode high-power applications is reported. The waveguide is a laterally flaring and transversely tapering GaAs buried ridge fabricated by selective area epitaxy. Single-lateral-mode powers of 200 mW were achieved. Index Terms-High power, single lateral mode.

Cited by 8 publications

References 8 publications

Quantum dot lasers with controllable spectral and modal characteristics

Quantum dot lasers with controllable spectral and modal characteristics

Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

High-Power Single-Spatial-Mode GaSb Tapered Laser around 2.0 μm with Very Small Lateral Beam Divergence

Contact Info

Product

Resources

About