Novel gate air cavity GaN HEMTs design for improved RF and DC performance

Huang, Z.; Sun, Huiqin; Ding, Xiao; Wang, Penglin; Li, Yuan; Xia, Fanjie; Xia, Xiaoyu; Tan, Xiuyang; Zhang, Miao; Ma, Jinpeng; Xu, Liang; Guo, Zhiyou

doi:10.1016/j.rinp.2021.104718

Cited by 2 publications

(1 citation statement)

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“…Under HTRB conditions, the positive shift in V TH is temperature-dependent due to electron trapping by defects created by hole emission and hot holes. The choice of gate metal material can be further optimized next, aiming to balance the relationship between output characteristics, V TH , and reliability, which can achieve a greater breakthrough in device performance [ 45 ]. In Figure 19 a, a proposed air-cavity-P-GaN connected HEMT is shown.…”

Section: Conclusion and Future Perspectivesmentioning

confidence: 99%

Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

Dai,

Wang,

2024

Micromachines

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With the development of high-voltage and high-frequency switching circuits, GaN high-electron-mobility transistor (HEMT) devices with high bandwidth, high electron mobility, and high breakdown voltage have become an important research topic in this field. It has been found that GaN HEMT devices have a drift in threshold voltage under the conditions of temperature and gate stress changes. Under high-temperature conditions, the difference in gate contact also causes the threshold voltage to shift. The variation in the threshold voltage affects the stability of the device as well as the overall circuit performance. Therefore, in this paper, a review of previous work is presented. Temperature variation, gate stress variation, and gate contact variation are investigated to analyze the physical mechanisms that generate the threshold voltage (VTH) drift phenomenon in GaN HEMT devices. Finally, improvement methods suitable for GaN HEMT devices under high-temperature and high-voltage conditions are summarized.

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Section: Conclusion and Future Perspectivesmentioning

confidence: 99%