Novel high power AlGaAs/GaAs HFET with a field-modulating plate operated at 35 V drain voltage

Asano, Kōichi; Miyoshi, Yosuke; Ishikura, K.; Nashimoto, Y.; Kuzuhara, Masaaki; Mizuta, Masahiro

doi:10.1109/iedm.1998.746246

Cited by 57 publications

(19 citation statements)

References 5 publications

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“…Various technologies have been developed in the more mature GaAs material system to increase the breakdown voltage, including insulated gate [5], recessed gate [6], [7], overlapping gate [8], field plate (FP) over a stepped insulator [9], and field-modulating plate over an insulator [10]. Similar techniques are under development in GaN-based transistors, demonstrating good results.…”

mentioning

confidence: 99%

High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates

Xing

Dora

Chini

et al. 2004

IEEE Electron Device Lett.

326

141

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Abstract-High-voltage Al 0 22 Ga 0 78 N-GaN high-electron mobility transistors have been fabricated using multiple field plates over dielectric passivation layers. The device breakdown voltage was found to increase with the addition of the field plates. With two field plates, the device showed a breakdown voltage as high as 900 V. This technique is easy to apply, based on the standard planar transistor fabrication, and especially attractive for the power switching applications.Index Terms-Breakdown voltage, field-effect transistors (FETs), field plates, high-electron mobility transistors (HEMTs), passivation, power electronics.

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mentioning

confidence: 99%

High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates

Xing

Dora

Chini

et al. 2004

IEEE Electron Device Lett.

326

141

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“…Field plates enhance the breakdown voltage of device by decreasing the peak of electric field near gate edge towards drain [2][3][4][5][6][7][8][9] . Field plates also help in reducing the extent of virtual gate formation and thus improve the transient operation of the device 10 .…”

Section: Introductionmentioning

confidence: 99%

Design and Fabrication of Multi-finger Field Plate for Enhancement of AlGaN/GaN HEMT Breakdown Voltage

et al. 2018

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The design and fabrication of gate/source connected multi-finger field plate structures using TCAD ATLAS simulation software is presented. The designed field plate structures are fabricated on indigenous AlGaN/GaN HEMT devices. AlGaN/GaN HEMT devices with field plate structures exhibit about three times improvement in breakdown voltage of device and are in close agreement with the simulation results. Integration of field plates in device have resulted in higher V DS (drain to source voltage) operation and improvement in output power of AlGaN/GaN HEMT devices. Incorporation of field plates also decrease the reverse leakage current of HEMT devices.

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“…Increasing the device breakdown voltage means that the device can operate at higher voltages and thus, keeping constant the device current, higher output power levels. The second one is instead related to a reduction of a parasitic effect which is called DC-to-RF dispersion or drain current-collapse (Asano et al, 1998, Ando et al,2003Chini et al, 2004;Chini et al, 2008). When the device is affected by this phenomenon, drain current levels reached during RF operation are lower than those recorded during DC measurements.…”

Section: Introductionmentioning

confidence: 99%

“…While everything seems to be very exciting in terms of output power it is now mandatory to evaluate the effects of the added field plate structure to the small-signal performances of the device. Several authors have reported a decrease in device power gain when adding field plate structures (Asano et al, 1998;Ando et al, 2003;, and the main reason has been related to the added parasitic capacitance between the field plate and channel capacitance which gives rise to an increase in the device gate drain capacitance. The effect of increasing the gate drain capacitance is to reduce both the current gain cutoff frequency and the power gain cutoff frequency whose expression are given by (Ross et al, 1996):…”

Section: Output Power and Small Signal Parameters Dependence From Fiementioning

confidence: 99%

“…One of these structures is the so called field plate structure. This structure has been successfully implemented in RF GaAs-and GaN-based devices (Asano et al, 1998;Ando et al, 2003;Chini et al, 2004;Chini et al, 2008;Wu et al 2006) boosting device power performance by 2-4 times compared to conventional ones. The origin of this improvement has been associated by many authors to at least two reasons.…”

Section: Introductionmentioning

confidence: 99%

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