Novel high power semiconductor module for trench IGBTs

Stockmeier,; Manz,; Steger,

doi:10.1109/wct.2004.240148

Cited by 4 publications

(2 citation statements)

References 2 publications

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“…The electrical resistivity is not affected by the presence of SF because they are formed and expanded only in a thin layer at the wafer surface. High energy X-ray investigation on the as-grown boule revealed a high quality single crystal without bending of the crystallographic planes pointing to a very low mosaicity in the whole crystal volume [8]. Growth along the [01-15] direction is considered to be very promising in order to achieve high quality SiC crystals.…”

Section: Silicon Carbide and Related Materials 2006mentioning

confidence: 99%

Growth and Characterization of High-Quality 6H-SiC (0115) Bulk Crystals

Filip

Epelbaum

Bickermann

et al. 2007

MSF

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New results on bulk growth of 6H-SiC crystals along the [01-15] direction are presented. The aim of our work is to improve the quality of the crystal grown by classical PVT method by employing alternative growth directions, other than conventional [0001]. Using a specially designed graphite crucible, crystals with an expansion angle of 30 degrees and diameters up to 40 mm have been grown. No polycrystalline rim develops at the contact with the graphite wall. Concerning specific defect content in the [01-15]-oriented crystals, they appear completely free of micropipes and screw or threading edge ([0001]-oriented) dislocations. The [01-15] crystal relaxes adopting a network of in-plane (0001) dislocations. They are not uniformly distributed reaching the maximum density of about 106 cm-2.

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Section: Silicon Carbide and Related Materials 2006mentioning

confidence: 99%

Growth and Characterization of High-Quality 6H-SiC (0115) Bulk Crystals

Filip

Epelbaum

Bickermann

et al. 2007

MSF

View full text Add to dashboard Cite

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“…One example is the SEMiX series that utilizes spring contacts for the IGBTs to eliminate the reliability problems associated with wire bonds [15]. One example is the SEMiX series that utilizes spring contacts for the IGBTs to eliminate the reliability problems associated with wire bonds [15].…”

Section: Intelligent Power Modulesmentioning

confidence: 99%