Novel insb-based quantum well transistors for ultra-high speed, low power logic applications

Abstract

luSb-based quantum \Yell lie1d-cffcct transistors with gate length dowll 10 0.2 III a]'c fabricated for the first time. Hull measurements show that room temperature electron lllobili ties over 30.000 Clll l V l s" are achieved with a s heet carrier densit�· over I 1012 em· l in a modulation doped InSb quantuIlI well with At�I I .,Sb ball'ier layers. Devices wilh 0.2 III gute length and 20% Al barrier exhibit DC tmns"onduclance of 625 SI 111 and If of 150 GHz at Vos �0.5V. 0.2 m devices fabricatcd Oll 30% Al barrier 111 0leriul ,h"'" DC tral1SC"lldlietance 01'920 51 mat Vos "O.5V. Benchmarking against state-of-the-art Si MOSFET s indicate� that InSbW transistors can a"hic\"c equivalent high speed performance witll 5-10 times lower clvnamic power di"ipation and therefore are a promising device technology 10 com plement scaled sil icon-based dC"ices for very low power. ultrn-high speed logic applications.

THz-pump/THz-probe spectroscopy of semiconductors at high field strengths [Invited]

“…Indium antimonide (InSb) has the highest electron mobility and saturation velocity of all known semiconductors, enabling the fabrication of transistors with extremely high switching speeds [15]. The elucidation of carrier dynamics in InSb on the ultrashort timescale is hence of great fundamental and technological relevance.…”

Robust Circuit & Architecture Design in the Nanoscale Regime

“…According to ITRS [8] some of the emerging logic devices which have the potential to replace Si in the post Si era are: a) Nanowire Field-Effect Transistors(NWFETs) [9] b) III-V compound semiconductor Field-Effect Transistors [10][11][12][13] c) Graphene Nanoribbon Field-Effect Transistors d) Carbon nanotube Field-Effect Transistors (CNFETs) [14] Nanowire Transistors: In Nanowire transistors a semiconducting nanowire of diameter around 0.5nm is used as a channel material. The nanowire material can be of silicon (Si), germanium (Ge), III-V, In 2 O 3 , ZnO or SiC semiconductors.…”

Modeling and Performance Analysis of III-V Nanowire Field-Effect Transistors

“…However, full band (FB) models are necessary to understand on-off current ratios and radio frequency (RF) power. Although there are series of reports on the experimental realizations of InSb and InAs NWFETs Ashley et al, 1997;Chau et al, 2005;Radosavljevic et al, 2008;Lind et al, 2006;Dayeh, Aplin, Zhou, Yu, Yu &Wang, 2007;Bryllert et al, 2006;Thelander et al, 2004;Ng et al, 2004), we find very few attempts to theoretically model them.…”

“…Contacts often define performance at the nanoscale. Reports by Intel and Qinetiq on fabricated both n-and p-type InSb quantum well FETs show that InSb-based quantum well FETs can achieve equivalent high performance with lower dynamic power dissipation Ashley et al, 1997;Chau et al, 2005;Radosavljevic et al, 2008). Recent discovery of the observation of Quantum Spin Hall effect in III-V (Liu et al, 2008) and II-VI (König et al, 2007) materials have also motivated the field of spintronics largly due to the fact that there is the possibility of low power logic devices design using the spin degree of freedom of the electron (Wolf et al, 2001;Murakami et al, 2003).…”