Novel materials for high-efficiency III–V multi-junction solar cells

Yamaguchi, Masafumi; Nishimura, Kazunari; Sasaki, T.; Suzuki, Hisao; Arafune, Koji; Kojima, Nobuaki; Ohsita, Yoshio; Okada, Yoshitaka; Yamamoto, Akio; Takamoto, Tatsuya; Araki, Kiyomichi

doi:10.1016/j.solener.2007.06.011

Cited by 154 publications

(67 citation statements)

References 9 publications

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“…INTRODUCTION Self-assembled (In,Ga)As quantum dots (QDs) and quantum wires (QWRs) are perspective candidates for application in novel electronic and optoelectronic systems, e.g., semiconductor lasers, 1 infrared photodetectors, 2 and solar cells 3,4 due to their novel characteristics resulting from quantum confinement. Even though, the optical and electrical properties of such confined systems are largely determined by the electronic spectrum of the (In,Ga)As QDs, the influence of the two-dimensional wetting layer (WL) states and interface states can be significant.…”

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confidence: 99%

Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

Кондратенко

Vakulenko

Mazur

et al. 2014

Journal of Applied Physics

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Suppression of the photoluminescence quenching effect in self-assembled In As ∕ Ga As quantum dots Appl. Phys. Lett. 87, 053109 (2005) The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80 K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83 eV to 1.0 eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media. V C 2014 AIP Publishing LLC.

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confidence: 99%

Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

Кондратенко

Vakulenko

Mazur

et al. 2014

Journal of Applied Physics

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“…In order to realize high efficiency lattice-mismatched InGaP/GaAs/InGaAs 3-junction solar cells, fundamental studies on buffer layer introduction [9], thermal cycle annealing [5], in-situ measurements [10] for strain relaxation and dislocation behavior in lattice-mismatched materials have been carried out. In order to realize high quality relaxed lattice-mismatched layers on GaAs or Ge substrates for super high-efficiency multi-junction solar cells, correlation between strain relaxation and dislocation behavior has been investigated.…”

Section: Recent Resultsmentioning

confidence: 99%

“…Knowledge obtained in this study [9,10] is quite important to design the relaxed buffer layer structures with lower residual strains and lower dislocation densities. Really, worldrecord efficiency inverted epitaxially grown latticemismatched InGaP/GaAs/InGaAs 3-junction cells with efficiencies of 37.9% under 1-sun and 43.5% under 240-305-suns has been demonstrated by Sharp Co. [8] under this project.…”

Section: Mbe-xrd Systemmentioning

confidence: 92%

Outline of Europe-Japan Collaborative Research on Concentrator Photovoltaics

Yamaguchi

Ĺuque

2013

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

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-The Europe-Japan Collaborative Research Project on Concentrator Photovoltaics (CPV) has been initiated under support by the EC (European Commission) and NEDO (New Energy and Industrial Technology Development Organization) since June 2011. This is project (NGCPV Project; a New Generation of Concentrator PhotoVoltaic cells, modules and systems ) is aiming to accelerate the move to very high efficiency and lower cost CPV technologies and to enhance widespread deployment of CPV systems. 7 organizations such as UPM, FhG-ISE Imperial College, BSQ, CEA-INES, ENEA, and PSE in Europe and 9 organizations such as TTI, Univ. Tokyo, AIST, Sharp Co. Daido Steel Co., Kobe Univ., Miyazaki Univ., Asahi Kasei Co., and Takano Co. participate in this project. The targets of this project are 1) to develop world-record efficiency CPV cells of more than 45%, 2) to develop world-record efficiency CPV modules of 35%, 3) to establish standard measurements of CPV cells and modules, 4) to install 50kW CPV system in Spain, to carry out field test of CPV system and to manage power generation of CPV systems, and 5) to develop high-efficiency and low-cost new materials and structure cells such as DT-V-N, III-Von-Si tandem, quantum dots and wells. This paper presents outline of this project and most recent results such as world record efficiency (37.9% under 1-sun) cell and high-efficiency (43.5% under 240-306 suns) concentrator cell with inverted epitaxial grown InGaP/GaAs/InGaAs 3-j unction solar cells.

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“…5 According to simulations substituting the germanium subcell with a subcell with E g ¼ 1 eV could increase the triple-junction SC efficiency by a few percent, and adding such a subcell to a classical triplejunction would allow one to reach 52% under concentrator illumination. 6,7 Addition of a small nitrogen content, leads to a reduction of the bandgap of GaAsN ternary alloys by hundreds of meV. 8 Additional content of indium allows one to grow Ga 1-x In x N y As 1-y with E g ¼ 1 eV lattice-matched to GaAs.…”

Section: Introductionmentioning

confidence: 99%

Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy

Baranov

Gudovskikh

Kudryashov

et al. 2018

Journal of Applied Physics

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The defect properties of InGaAsN dilute nitrides grown as sub-monolayer digital alloys (SDAs) by molecular beam epitaxy for photovoltaic application were studied by space charge capacitance spectroscopy. Alloys of i-InGaAsN (Eg = 1.03 eV) were lattice-matched grown on GaAs wafers as a superlattice of InAs/GaAsN with one monolayer of InAs (<0.5 nm) between wide GaAsN (7–12 nm) layers as active layers in single-junction solar cells. Low p-type background doping was demonstrated at room temperature in samples with InGaAsN layers 900 nm and 1200 nm thick (less 1 × 1015 cm−3). According to admittance spectroscopy and deep-level transient spectroscopy measurements, the SDA approach leads to defect-free growth up to a thickness of 900 nm. An increase in thickness to 1200 nm leads to the formation of non-radiative recombination centers with an activation energy of 0.5 eV (NT = 8.4 × 1014 cm−3) and a shallow defect level at 0.20 eV. The last one leads to the appearance of additional doping, but its concentration is low (NT = 5 × 1014 cm−3) so it does not affect the photoelectric properties. However, further increase in thickness to 1600 nm, leads to significant growth of its concentration to (3–5) × 1015 cm−3, while the concentration of deep levels becomes 1.3 × 1015 cm−3. Therefore, additional free charge carriers appearing due to ionization of the shallow level change the band diagram from p-i-n to p-n junction at room temperature. It leads to a drop of the external quantum efficiency due to the effect of pulling electric field decrease in the p-n junction and an increased number of non-radiative recombination centers that negatively impact lifetimes in InGaAsN.

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Novel materials for high-efficiency III–V multi-junction solar cells

Cited by 154 publications

References 9 publications

Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

Outline of Europe-Japan Collaborative Research on Concentrator Photovoltaics

Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy

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