2019
DOI: 10.1016/j.mne.2019.100043
|View full text |Cite
|
Sign up to set email alerts
|

Novel method of alignment to buried cavities in cavity-SOI wafers for advanced MEMS devices

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
2

Relationship

1
1

Authors

Journals

citations
Cited by 2 publications
(2 citation statements)
references
References 18 publications
0
2
0
Order By: Relevance
“…The main technical challenge arises from the fact that the submicron (less than 1 µm) alignment accuracy between the buried cavity-BOX mask and the structures on top of the device layer must be guaranteed. To overcome that problem, the alignment marker transferring strategy, proposed and developed by C. Mountain et al [ 11 ], was applied to ensure high precision alignment of the structures. Another goal was to demonstrate the functionality of the pre-patterned BOX mask.…”
Section: Fabricationmentioning
confidence: 99%
See 1 more Smart Citation
“…The main technical challenge arises from the fact that the submicron (less than 1 µm) alignment accuracy between the buried cavity-BOX mask and the structures on top of the device layer must be guaranteed. To overcome that problem, the alignment marker transferring strategy, proposed and developed by C. Mountain et al [ 11 ], was applied to ensure high precision alignment of the structures. Another goal was to demonstrate the functionality of the pre-patterned BOX mask.…”
Section: Fabricationmentioning
confidence: 99%
“…The high-precision alignment (<500 nm) of the prefabricated cavities with the structures fabricated later, on the device layer, is ensured by applying a newly developed marker transferring strategy. The method uses a set of primary alignment markers, located on the SOI wafer terrace, that are transferred onto the device layer using front-to-front alignment [ 11 ]. The patterned BOX can serve as a stop layer during the device layer thinning, and it can be used as a hard mask during the device layer patterning from the backside.…”
Section: Introductionmentioning
confidence: 99%