2021
DOI: 10.1109/access.2021.3132490
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Novel Multiple-Layer Stack Capacitor and Its Application in the IRPFA Readout Circuit

Abstract: Date of publication xxxx 00, 0000, date of current version xxxx 00, 0000.

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Cited by 2 publications
(7 citation statements)
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“…In terms of noise indicators, the small area array test results in this article have significant advantages compared to those in the literature (in 2016). In addition, the larger pixel array areas shown in references [14] (in 2021) and [15] (in 2023) are not on the same order of magnitude as the noise in this paper, but compared to the noise converted into a single pixel, this paper's findings are superior to those of [14] and similar to [15]. In terms of other indicators, as Refs.…”
Section: Discussionmentioning
confidence: 60%
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“…In terms of noise indicators, the small area array test results in this article have significant advantages compared to those in the literature (in 2016). In addition, the larger pixel array areas shown in references [14] (in 2021) and [15] (in 2023) are not on the same order of magnitude as the noise in this paper, but compared to the noise converted into a single pixel, this paper's findings are superior to those of [14] and similar to [15]. In terms of other indicators, as Refs.…”
Section: Discussionmentioning
confidence: 60%
“…The history of the development of infrared focal plane array detectors ranges from first-generation products, which mainly focused on scanning imaging with units and utilized multiple devices as cores [9], to the current fourth-generation system-level chip products [10]. At present, SUI, Attollo, Sony, and other companies have developed 5 µm center distance short wave infrared InGaAs focal plane detectors [11]; it can be seen that large-area arrays and high-performance readout circuits have become a trend [12][13][14][15]. Therefore, it is necessary to design a specialized infrared readout circuit to amplify and denoise the signal in order to ensure the effectiveness of signal extraction [16][17][18][19][20].…”
Section: Introductionmentioning
confidence: 99%
“…This will be the case with any feasible initial IR detector chip misalignment (displacement). The rate of change of the decaying amplitude 𝑈 𝑚 , obtained using (11), can be also predicted. Figure 15 shows the chip motion decay magnitude for two scenarios assuming initial chip displacement of 3.0 and 4.5 m.…”
Section: Take Fig 14mentioning
confidence: 99%
“…There has been substantial research and development in IR detectors over the past 20 years, particularly in the context of their miniaturization, detector material developments (namely the use of compound semiconductors), and the design and fabrication of fine-pitch pixel arrays [5][6][7]. Current developments in IR detector and FPA technologies are driven by trends and demands for improved sensitivity and resolution of the imaging systems, continuing advances in sensing material compositions and their processing, and needs for high-yield low-cost fabrication capabilities [8][9][10][11]. For example, investigations by Teng et al focused on a novel metalorganic chemical vapor deposition method for growing infrared InAs/GaSb superlattice focal plane arrays [10], and Liu at al.…”
Section: Introductionmentioning
confidence: 99%
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