Novel output states in the erbium-doped fiber laser near zero dispersion with semiconductor saturable absorber mirror

Tao, Chuanwei; Hui, Xizeng; Shan, K. Y.; Zhang, Lei

doi:10.1016/j.ijleo.2016.12.027

Cited by 3 publications

(1 citation statement)

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“…In contrast, the passive mode locking technique, based on saturable absorbers (SAs), not only circumvents these drawbacks but also exhibits significant advantages, including low mode locking threshold, fast response time, and high stability. Although commercial semiconductor saturable absorber mirrors (SESAMs) can achieve efficient modulation and stable pulse output, its preparation process remains complex, and working wavelength range is narrower [12]. On the other hand, SAs based on low-dimensional nanomaterials demonstrate a wider spectral tuning range, fast response time, and ease of integration, making them highly effective for realizing high performance mode-locked fiber lasers [13].…”

Section: Introductionmentioning

confidence: 99%

Passive mode locking Erbium-doped fiber laser based on semimetal TaP quantum dots

long,

Xu,

Wen

et al. 2023

Preprint

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The novel semimetal tantalum phosphide (TaP) is known for its notable physical property including high carrier mobility, zero bandgap structure, and superconductivity. However, there exists no prior record of TaP being harnessed as a saturable absorber (SA) within ultrafast fiber lasers. In this study, ultrasound assisted liquid phase exfoliation is applied to fabricate TaP quantum dots (QDs). Then QDs are subsequently deposited onto the tapered waist of a specialized fiber to create a TaP-SA. The evaluation of nonlinear optical properties is conducted using a two-armed balanced probing device, which yields noteworthy results including a modulation depth of 10.8 % and a saturation intensity of 0.52 KW/cm2. Then, the TaP-SA is applied in Er-doped fiber laser (EDFL) which demonstrates that a steady mode-locked pulse output with an average output power of 3.545 mW and a pulse width of 552 fs is obtained. The intrinsic semimetal properties of TaP underscore its potential in the realm of ultrafast photonic and nonlinear optical devices.

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Section: Introductionmentioning

confidence: 99%