Novel Perovskite Semiconductors for the Detection of Special Nuclear Material

Abstract

Project highlight. Portable, discrete radiation detection is imperative for nuclear safeguards applications, radioactive 3D imaging, and neutron spectroscopy. Current neutron detectors, including gas proportional counters and scintillators, are not suitable for discrete or portable monitoring due to size, weight, and power limitations. Perovskite based semiconductors have the potential to overcome existing issues with current nuclear detectors and exceed the performance of traditional semiconducting detecting materials. The goal of this project is to create novel boron (10 B) based single crystal perovskites for low-profile solid-state neutron detection. Directly incorporating the neutron capturing element (10 B) into the unit cell of the detector eliminates the energy diminishing routes that typically occur in indirect conversion materials, including self-absorption and interlayer energy transfer routes. Intellectual Property Review This report has been reviewed by SRNL Legal Counsel for intellectual property considerations and is approved to be publicly published in its current form.

Study of a metal-halide perovskite CsPbBr3 thin film deposited on a 10B layer for neutron detection

“…In previous studies, the combination of MHPs with 10 B for thermal neutron detection has been explored and shown to offer significant advantages due to MHPs' excellent optoelectronic properties and 10 B's high neutron capture capability [38][39][40][41][42]. In our work, we propose a bi-layer structure consisting of a 10 B layer and a CsPbBr 3 -based film, created using laser ablation (LA) deposition.…”

“…In our work, we propose a bi-layer structure consisting of a 10 B layer and a CsPbBr 3 -based film, created using laser ablation (LA) deposition. Previous references, such as [39,40], have demonstrated successful thermal neutron detectors based on halide perovskite nanocrystals, with thinfilm CsPbBr 3 -based diodes achieving intrinsic thermal neutron efficiencies of up to 4.3% at low bias voltages (−5 V). In our approach, we take advantage of the scintillation properties of the CsPbBr 3 -based thin film, giving users the flexibility to choose an appropriate light sensor for their specific application needs.…”