Novel phosphors based on porous materials

Tiginyanu, I. M.; Ursaki, V. V.; Sirbu, L.; Enaki, M.; Monaico, Eduard

doi:10.1002/pssc.200881116

Cited by 6 publications

(5 citation statements)

References 6 publications

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“…In order to inhibit and easily control the oxidation of the porous template it was proposed to perform the annealing in nitrogen flow containing less than 1% oxygen. The conditions of thermal treatment also determine the crystallographic structure of the native oxides formed and that of rare earth compounds [152].…”

Section: Nanocomposite Materials Based On Porous Semiconductorsmentioning

confidence: 99%

“…Porous GaP [150,152,[175][176][177][178] and GaAs [151,152,178] templates have been widely used for the preparation of nanocomposite materials via impregnation processes with rare earth containing solutions followed by thermal treatment to optically activate the rare earth ions. Preparation of various nanocomposite phosphors with the composition and structure controlled by technological conditions has been demonstrated, and efficient optical activation of Er 3+ , Eu 3+ , and Tb 3+ ions was observed as a result of PL and CL investigation.…”

Section: Photo-and Cathodoluminescencementioning

confidence: 99%

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Porous semiconductor compounds

Monaico

Tiginyanu

Ursaki

2020

Semicond. Sci. Technol.

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In this review paper, we present a comparative analysis of the electrochemical dissolution of III-V (InP, GaAs, GaN), II-VI (ZnSe, CdSe) and SiC semiconductor compounds. The resulting morphologies are discussed, including those of porous layers and networks of low-dimensional structures such as nanowires, nanobelts, and nanomembranes. Self-organized phenomena in anodic etching are disclosed, leading to the formation of controlled porous patterns and quasi-ordered distribution of pores. Results of templated electrochemical deposition of metal nanowires, nanotubes and nanodots are summarized. Porosification of some compounds is shown to improve luminescence characteristics as well as to enhance photoconductivity, second harmonic generation and Terahertz emission. Possible applications of porous semiconductor compounds in various areas are discussed.

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Section: Nanocomposite Materials Based On Porous Semiconductorsmentioning

confidence: 99%

Section: Photo-and Cathodoluminescencementioning

confidence: 99%

Porous semiconductor compounds

Monaico

Tiginyanu

Ursaki

2020

Semicond. Sci. Technol.

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“…An attractive alternative is to enhance the development of other porous III-V semiconductor compounds, such as GaP, InP , and GaAs as well as the wide bandgap and corrosion resistant materials like GaN and SiC. [8][9][10][11][12][13] Wide bandgap III-nitride semiconductors are generally grown on sapphire or SiC substrates. The GaN, sapphire, and 6H À SiC semiconductors have in-plane lattice constants of 3.189 Å , 4.758 Å , and 3.08 Å , respectively, and have a thermal expansion coefficients of 5.59 Â 10 À6 /K, 7.5 Â 10…”

mentioning

confidence: 99%

Porosity-induced relaxation of strains in GaN layers studied by means of micro-indentation and optical spectroscopy

Najar¹,

Gerland²,

Jouiad³

2012

Journal of Applied Physics

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We report the fabrication of porous GaN nanostructures using UV-assisted electroless etching of bulk GaN layer grown on c-plane sapphire substrate in a solution consisting of HF : CH 3 OH : H 2 O 2 . The morphology of the porous GaN nanostructures was characterized for different etching intervals using high resolution scanning electron microscopy. The geometry and size of resultant pores do not appear to be affected by the etching time; however, the pore density was augmented for longer etching time. Micro-indentation tests were carried out to quantify the indentation modulus for different porous GaN nanostructures. Our results reveal a relationship between the elastic properties and the porosity kinetics, i.e., a decrease of the elastic modulus was observed with increasing porosity. The photoluminescence (PL) and Raman measurements carried out at room temperature for the etched samples having a high degree of porosity revealed a strong enhancement in intensity. Also, the peak of the PL wavelength was shifted towards a lower energy. The high intensity of PL was correlated to an increase of scattered photons within the porous media and to the reduction of the dislocation density. V C 2012 American Institute of Physics. [http://dx

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“…For all these reasons there is a strong effort in fabrication procedures both in academic and in industrial laboratories. Porous metal and semiconductors are generally fabricated by electrochemical methods, like dealloying (Cu, Pt, Pd, Au, and Ag) [1][2][3] and selective etching (Si, SiC, TiO 2 , InP, GaP, GaAs) [4,5], but also exploiting the possibilities of classic micromachining techniques, such as chemical vapors deposition or plasma enhanced chemical vapors deposition, and electro-spinning [6]. Depending on the parameters of he fabrication processes, but also on the characteristics of the bulk materials (doping level, orientation, purity, and so on), a very broad range of porosity and pore size dimensions can be achieved: again, in the case of the porous silicon, porosities between 30% and 90%, and pores size ranging in the nanometer to micrometer interval, can be easily obtained.…”

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confidence: 99%

A natural source of porous biosilica for nanotech applications: the diatoms microalgae

Stefano

Tommasi

et al. 2010

Phys. Status Solidi C

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Several biological organisms, from some sea shells to butterflies, exhibit beautiful and sophisticated organs, developed during the evolution of each species, which properties are defined by their nanostructures. The marine diatoms are microscopic algae enclosed between two valves of hydrated amorphous silica. These intricate structures, called frustules, show quite symmetric patterns of micrometric and nanometric pores. Their strong similarity with man‐made materials, such as synthetic zeolites, or porous silicon and alumina, suggests to exploit the physical properties of the frustules in nanotech applications. In this paper, we review the most relevant results achieved in our laboratory, and all over the world, about the discovery of surprising features that can be found in the characterization of these natural porous biosilica materials. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Novel phosphors based on porous materials

Cited by 6 publications

References 6 publications

Porous semiconductor compounds

Porous semiconductor compounds

Porosity-induced relaxation of strains in GaN layers studied by means of micro-indentation and optical spectroscopy

A natural source of porous biosilica for nanotech applications: the diatoms microalgae

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