2012
DOI: 10.1186/1556-276x-7-582
|View full text |Cite
|
Sign up to set email alerts
|

Novel photoinduced phase transitions in transition metal oxides and diluted magnetic semiconductors

Abstract: Some transition metal oxides have frustrated electronic states under multiphase competition due to strongly correlated d electrons with spin, charge, and orbital degrees of freedom and exhibit drastic responses to external stimuli such as optical excitation. Here, we present photoemission studies on Pr0.55(Ca1 − ySry)0.45MnO3 (y = 0.25), SrTiO3, and Ti1 − xCoxO2 (x = 0.05, 0.10) under laser illumination and discuss electronic structural changes induced by optical excitation in these strongly correlated oxides.… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2014
2014
2022
2022

Publication Types

Select...
3

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(2 citation statements)
references
References 22 publications
0
2
0
Order By: Relevance
“…The highly confined electric field and a partial injection and trapping of charge carriers can reorganize the local polaronic distribution (modulated strain/electron/spin), 21 usually found in thermodynamic disarray at room temperature, hence promoting the expansion of a particular metastable state which can be detected by a dielectric/ferroelectric signature in contrast to the electrical properties of the conventional host phase. [22][23][24] The formation of these embedded charge/orbital and antiferromagnetic orders prevent electron hopping, and the correlations can survive locally as ''Zener polarons'' 25,26 above T CO and even T N . Under these circumstances Mn ions and Mn-O-Mn bonds become nonequivalent resulting in a noncentrosymmetric electronic structure which is prone to exhibit some piezoelectric response.…”
Section: Resultsmentioning
confidence: 99%
“…The highly confined electric field and a partial injection and trapping of charge carriers can reorganize the local polaronic distribution (modulated strain/electron/spin), 21 usually found in thermodynamic disarray at room temperature, hence promoting the expansion of a particular metastable state which can be detected by a dielectric/ferroelectric signature in contrast to the electrical properties of the conventional host phase. [22][23][24] The formation of these embedded charge/orbital and antiferromagnetic orders prevent electron hopping, and the correlations can survive locally as ''Zener polarons'' 25,26 above T CO and even T N . Under these circumstances Mn ions and Mn-O-Mn bonds become nonequivalent resulting in a noncentrosymmetric electronic structure which is prone to exhibit some piezoelectric response.…”
Section: Resultsmentioning
confidence: 99%
“…After the report by Ueda et al [9] that semiconductor ZnO exhibits room temperature ferromagnetism when some atomic percentage of transition metal ions was doped, the study on zinc oxide-based DMS gained importance. DMS materials when grown with transition metal ions prevail electric and magnetic properties for the reason that transition metal d electrons correlates with spin, charge, and orbital degrees of freedom [10]. The behavior of transition metal doped on high k dilute magnetic oxides exhibiting room temperature ferromagnetism paving way to realize hybrid spintronic devices [11].…”
Section: Introductionmentioning
confidence: 99%