2017
DOI: 10.1109/jphotov.2017.2748999
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Novel Plating Processes for Silicon Heterojunction Solar Cell Metallization Using a Structured Seed Layer

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Cited by 14 publications
(9 citation statements)
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“…On the other hand, a plated metallization is intrinsically a low temperature process. Plated approaches using highly conductive and less expensive copper are currently investigated . The Cu‐based contacts can be electroplated simultaneously on both‐sides of the solar cells and TCOs like indium‐tin‐oxide (ITO) are good barrier to metals diffusion into silicon .…”
Section: Introductionmentioning
confidence: 99%
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“…On the other hand, a plated metallization is intrinsically a low temperature process. Plated approaches using highly conductive and less expensive copper are currently investigated . The Cu‐based contacts can be electroplated simultaneously on both‐sides of the solar cells and TCOs like indium‐tin‐oxide (ITO) are good barrier to metals diffusion into silicon .…”
Section: Introductionmentioning
confidence: 99%
“…An etchant is inkjet‐printed to structure the contact positions in the Al layer. This grid‐patterning method is even cheaper than the deposition of a reactive silver ink onto the aluminum . Only a small area − contact‐grid area <10% of the cell, has to be printed in contrary to the “Resist route” (masking >90% of the cell area).…”
Section: Introductionmentioning
confidence: 99%
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“…Plated metallization on TCO for solar cells faces several challenges [6][7][8][9][10][11]. While plated copper features low adhesion on TCOs, both-sides of the cell area are susceptible to plating.…”
Section: Introductionmentioning
confidence: 99%