Novel SiC SBD-wall-integrated trench MOSFET with a semi-superjunction and split trench gate

Luo, Xiaorong; Huang, Junyue; Xu, Song; Jiang, Qinfeng; Wei, Jie; Fang, Jian; Yang, Fei

doi:10.1007/s11432-021-3324-0

Cited by 4 publications

(1 citation statement)

References 6 publications

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“…In order to reduce the power dissipation in high frequency and high power applications, the Cgd of the MOSFET must be minimized because the power dissipation originates from their charging and discharging during each switching cycle [19][20][21]. Based on this, Split Gate Trench (SGT) MOSFETs are becoming key components for various high efficiency medium to high voltage power applications due to their relatively low switching losses [22][23][24]. The SG structure serves as a vertical field plate which optimizes the electric field distribution of the drift region under the instruction of RESURF theory [25].…”

Section: Introductionmentioning

confidence: 99%

A novel 4H-SiC multiple stepped SGT MOSFET with improved high frequency figure of merit

Zhang,

Luo,

et al. 2023

Phys. Scr.

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A novel 4H-SiC Multiple Stepped SGT MOSFET (MSGT-MOSFET) is presented and investigated utilizing TCAD simulations in this paper. We have quantitatively studied the characteristics of the device through simulation modeling and physical model calculations, and comparatively analyzed the performance and application prospects of this novel device. The gate-to-drain capacitance (Cgd) and gate-to-drain charge (Qgd) of the MSGT-MOSFET are significantly reduced in comparison with the double trench MOSFET (DT-MOSFET) and the conventional SGT MOSFET (CSGT-MOSFET), due to the reduction of the overlapping area of the split gate (SG) structure and drift region. Therefore, the obtained high frequency figure of merit (HF-FOM) defined as [Ron×Cgd] reduced by 23.9% compared with DT-MOSFET and CSGT-MOSFET. And the HF-FOM [Ron×Qgd] for the MSGT-MOSFET significantly decreased by 71% and 50%, respectively, compared to that of the DT-MOSFET and CSGT-MOSFET. Furthermore, the switching loss is also simulated and calculated. And the total switching loss of the proposed MSGT-MOSFET realizes 42.9% and 21.7% reduction in comparison with the DT-MOSFET and CSGT-MOSFET. The overall enhanced performances suggest that the MSGT-MOSFET is an excellent choice for high frequency power electronic applications.

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