Novel solution synthesis of the overlooked cubic phase Cu₂GeTe₃ nanocrystals for optoelectronic devices

Abstract

Cubic phase, monodispersed size and uniform shape Cu2GeTe3 nanocrystals exhibiting excellent optoelectronic properties have been for the first time synthesized by a facile colloidal method.

Solution-phase controlled synthesis of Cu3NbSe4 nanocrystals for optoelectronic applications

“…Furthermore, the optoelectronic characteristics of the Cu 3 NbSe 4 nanocrystals were investigated by fabricating a photoresponse device, which was constructed by spin-coating the concentrated ligand-exchanged Cu 3 NbSe 4 nanocrystals dispersed in toluene onto a glass substrate and employing a pair of indium tin oxide (ITO) electrodes. 51,53 Considering the strong absorption of the synthesized Cu 3 NbSe 4 nanocrystals in the visible light range, a 300 W xenon lamp equipped with a 400 nm cutoff filter (400 nm < λ < 780 nm) was used as a white light source. Meanwhile, the light intensity was adjusted and measured using an optical power meter.…”

“…Furthermore, the opto- electrodes. 51,53 Considering the strong absorption of the synthesized Cu 3 NbSe 4 nanocrystals in the visible light range, a 300 W xenon lamp equipped with a 400 nm cutoff filter (400 nm < λ < 780 nm) was used as a white light source. Meanwhile, the light intensity was adjusted and measured using an optical power meter.…”

Explosive Crystallization Characteristic of Ge–Cu–Te Thin Films for Phase-Change Memory

“…89-2880, space group: F4(-)3m, a = 5.950 Å) can all be accurately indexed to the diffraction peaks located at 25.9, 29.9, 42.9, and 50.8°. 25 The XRD pattern shows no additional impurity peaks, indicating there is no phase Similarly, radially extended fanlike structures were also observed in the Ge thin films. 26 The uneven crystallite fanlike domains, whose sizes vary from 10 to 2 μm, are observed for the 90 nm thin films annealed at 200 °C for 20 min, as shown in Figure 2a.…”

Solution-grown ternary quasi-cube AgSbTe2 and its optoelectronic performance for broadband photodetection

“…1–6 Traditional photodetectors are usually composed of semiconductor nanostructures owing to their high light absorption coefficients and tunable band gaps. 7–10 However, the preparation process of those photodetectors often requires a complex material growth process and a high-cost integrated procedure. 11 Currently, colloidal nanocrystal-based photodetectors have achieved significant development because of their outstanding advantages, such as a simple preparation process, large optical absorption cross sections and good compatibility with many kinds of substrates for device fabrication.…”