Novel SONOS – type nonvolatile memory device with stacked tunneling and charge trapping layers

Tsai, Pei-Hsuan; Chang‐Liao, Kuei‐Shu; Wu, Tzi‐Yi; Wang, Tien-Ko; Tzeng, Pei-Jer; Lin, Chia‐Hua; Lee, Lung-Sheng; Tsai, M. J.

doi:10.1016/j.sse.2008.06.030

Cited by 7 publications

(3 citation statements)

References 7 publications

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“…[5][6][7][8] As compared with floating gate-type nonvolatile memories, SONOS memory adopts an oxide-nitrideoxide stacked structure, and the charges are stored in discrete traps of a silicon nitride trapping layer, so that a single defect will not cause discharge of total memory. [9][10][11] Nevertheless, the trade-off between data retention and program/erase speed limits the development of traditional SONOS nonvolatile memory. 12,13) The extensive researches have been performed so as to conquer the bottleneck.…”

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confidence: 99%

Improved memory characteristics for nonvolatile memory by using a double-potential well charge trapping layer

Tang

Geng

et al. 2019

Appl. Phys. Express

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A memory capacitor incorporating a designed ZrxSi1-xO2 trapping layer with a double-potential well bandgap is fabricated and investigated. Compared to single potential well and flat energy band, the double-potential well improves memory characteristics, and a faster program time of 9 × 10−6 s at +6 V flat band voltage shift, a lower charge loss of 3.6% at 200 °C up to 104 s, and a wider charge loss temperature insensitive range of 20 °C–134 °C can be obtained. The results indicate that the double-potential well bandgap is an appealing energy band structure for future nonvolatile memory applications.

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confidence: 99%

Improved memory characteristics for nonvolatile memory by using a double-potential well charge trapping layer

Tang

Geng

et al. 2019

Appl. Phys. Express

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“…HfO 2 [3], ZrO 2 [4], Ta 2 O 5 [5,6], HfON [7] and HfAlO [8]) and different trapping layer structures (e.g. HfO 2 /Si 3 N 4 [9], ZrO 2 /Si 3 N 4 [10], HfON/Si 3 N 4 [11], Si 3 N 4 /Al 2 O 3 /Si 3 N 4 [12], HfO 2 /HfAlO/HfO 2 [13] and HfO 2 /TiO 2 multilayers [14]), which partially overcome the difficulties in erase speed, data retention and operation voltage, more efforts are still needed. In this paper, a CTF device with a stacked HfO 2 /Ta 2 O 5 trapping layer is demonstrated.…”

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confidence: 99%

Improved speed and data retention characteristics in flash memory using a stacked HfO₂/Ta₂O₅charge-trapping layer

Zheng¹,

Huo²,

Zhang

et al. 2011

Semicond. Sci. Technol.

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This paper reports the simultaneous improvements in erase speed and data retention characteristics in flash memory using a stacked HfO 2 /Ta 2 O 5 charge-trapping layer. In comparison to a memory capacitor with a single HfO 2 trapping layer, the erase speed of a memory capacitor with a stacked HfO 2 /Ta 2 O 5 charge-trapping layer is 100 times faster and its memory window is enlarged from 2.7 to 4.8 V for the same ±16 V sweeping voltage range. With the same initial window of V FB = 4 V, the device with a stacked HfO 2 /Ta 2 O 5 charge-trapping layer has a 3.5 V extrapolated 10-year retention window, while the control device with a single HfO 2 trapping layer has only 2.5 V for the extrapolated 10-year window. The present results demonstrate that the device with the stacked HfO 2 /Ta 2 O 5 charge-trapping layer has a strong potential for future high-performance nonvolatile memory application.

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“…In the SO-NOS devices, thin silicon dioxide is typically used as the tunneling layer, since it has high operating speed, low write/erase voltage and superior endurance. However, the date retention time [16][17][18] and program/erase speed are still the bottlenecks for the applications of SONOS due to the thin tunneling layer [19]. SO-NOS devices evolve from traditional metal-nitride-oxide-silicon (MNOS) devices [20] that pioneered in the history of nonvolatile semiconductor memory in 1960's.…”

Section: Introductionmentioning

confidence: 99%

Progress of High-k Dielectrics Applicable to SONOS-Type Nonvolatile Semiconductor Memories

Tang¹,

Liu²,

Zhu³

2010

Transactions on Electrical and Electronic Materials

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As a promising candidate to replace the conventional floating gate flash memories, polysilicon-oxide-nitride-oxidesilicon (SONOS)-type nonvolatile semiconductor memories have been investigated widely in the past several years. SONOS-type memories have some advantages over the conventional floating gate flash memories, such as lower operating voltage, excellent endurance and compatibility with standard complementary metal-oxide-semiconductor (CMOS) technology. However, their operating speed and date retention characteristics are still the bottlenecks to limit the applications of SONOS-type memories. Recently, various approaches have been used to make a trade-off between the operating speed and the date retention characteristics. Application of high-k dielectrics to SONOS-type memories is a predominant route. This article provides the state-of-the-art research progress of high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories. It begins with a short description of working mechanism of SONOS-type memories, and then deals with the materials' requirements of high-k dielectrics used for SONOS-type memories. In the following section, the microstructures of high-k dielectrics used as tunneling layers, charge trapping layers and blocking layers in SONOS-type memories, and their impacts on the memory behaviors are critically reviewed. The improvement of the memory characteristics by using multilayered structures, including multilayered tunneling layer or multilayered charge trapping layer are also discussed. Finally, this review is concluded with our perspectives towards the future researches on the high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories.

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Novel SONOS – type nonvolatile memory device with stacked tunneling and charge trapping layers

Cited by 7 publications

References 7 publications

Improved memory characteristics for nonvolatile memory by using a double-potential well charge trapping layer

Improved memory characteristics for nonvolatile memory by using a double-potential well charge trapping layer

Improved speed and data retention characteristics in flash memory using a stacked HfO₂/Ta₂O₅charge-trapping layer

Progress of High-k Dielectrics Applicable to SONOS-Type Nonvolatile Semiconductor Memories

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Novel SONOS – type nonvolatile memory device with stacked tunneling and charge trapping layers

Cited by 7 publications

References 7 publications

Improved memory characteristics for nonvolatile memory by using a double-potential well charge trapping layer

Improved memory characteristics for nonvolatile memory by using a double-potential well charge trapping layer

Improved speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5charge-trapping layer

Progress of High-k Dielectrics Applicable to SONOS-Type Nonvolatile Semiconductor Memories

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Improved speed and data retention characteristics in flash memory using a stacked HfO₂/Ta₂O₅charge-trapping layer