2020
DOI: 10.1016/j.diamond.2020.108103
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Novel structuring technique for diamond coatings

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Cited by 4 publications
(1 citation statement)
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“…The SCD serves solely to block specific diamond growth areas for the second CVD process. Copper was already used in the past for controlling CVD diamond growth in specific areas on silicon substrate [29], as copper is a non-carbide forming element. The electric field build-up between the wire (cathode) and two planar BDD anodes facing each other is responsible for the uneven distribution of copper particles during the electrochemical deposition step.…”
Section: Diamond As Insulation and Electrochemical Active Sitementioning
confidence: 99%
“…The SCD serves solely to block specific diamond growth areas for the second CVD process. Copper was already used in the past for controlling CVD diamond growth in specific areas on silicon substrate [29], as copper is a non-carbide forming element. The electric field build-up between the wire (cathode) and two planar BDD anodes facing each other is responsible for the uneven distribution of copper particles during the electrochemical deposition step.…”
Section: Diamond As Insulation and Electrochemical Active Sitementioning
confidence: 99%