Novel UV devices on high-quality AlGaN using grooved underlying layer

Tsuzuki, Hirotoshi; Mori, Fumiaki; Takeda, Kenta; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu; Yoshida, Harumasa; Kuwabara, Masakazu; Yamashita, Yoshifumi; Kan, Hirofumi

doi:10.1016/j.jcrysgro.2009.01.031

Cited by 62 publications

(48 citation statements)

References 15 publications

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“…5,6 Owing to their wide bandgap and excellent thermal stability and conductivity, AlN templates on heterosubstrates such as sapphire, silicon carbide, and silicon have been promising candidates for growth of AlGaN. 3,7,8 However, due to the large lattice mismatch and thermal expansion coefficient differences between AlN and the substrate, growth of AlN templates still suffers from high-density threading dislocations as well as poor surface morphology. To achieve high-quality AlN templates, many approaches such as the ammonia pulse-flow multilayer growth method and pulsed atomic layer epitaxy (PALE) have been proposed, and great progress has been made.…”

Section: Introductionmentioning

confidence: 99%

The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor Deposition

Wang

Xiong

et al. 2011

Journal of Elec Materi

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AlN epilayers were grown directly on sapphire (0001) substrates using a combined growth scheme, consisting of a low-temperature nucleation layer and a second layer grown by high-temperature pulsed atomic layer epitaxy via metalorganic chemical vapor deposition. With an emphasis on the nucleation layer, its growth temperature was varied from 470°C to 870°C, and obvious differences in the surface morphology, crystal quality, and strain states of the overall AlN epilayers were observed. Based on atomic force microscopy, x-ray diffraction, and Raman spectroscopy results, these differences are ascribed to the nucleation sites and the subsequent grain size. Due to the enhanced mobility of Al adatoms with increasing temperature, the nucleation sites decrease and the subsequent grain size increases, leading to the achievement of atomically flat AlN epilayers with good crystal quality for the nucleation layer grown at 570°C. However, at higher nucleation layer growth temperature, the properties of the AlN epilayers deteriorate due to the possible appearance of misaligned AlN grains. A model is also developed according to all observations.

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Section: Introductionmentioning

confidence: 99%

The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor Deposition

Wang

Xiong

et al. 2011

Journal of Elec Materi

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“…The threading dislocation densities of AlN underlying layers were controlled from 3×10 9 to 1×10 10 cm -2 by changing the growth condition. The value of the dislocation density of each sample was estimated from the values of full width half maximum (FWHMs) of the X-ray rocking curve (XRC) ω-scan (0002) and (10)(11)(12) …”

Section: Mqws On Alnmentioning

confidence: 99%

Dislocation density dependence of stimulated emission characteristics in AlGaN/Al multiquantum wells

Matsubara

Yamada

Takeda

et al. 2013

Phys. Status Solidi C

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We investigated dislocation density dependence on stimulated emission characteristics of AlGaN/AlN multiquantum wells (MQWs: emission wavelength of approximately 285 nm) on AlN templates with various dislocation densities. We found that the stimulated emission characteristics of the deep UV MQWs were strongly dependent on the dislocation densities. A reduction of the dislocation densities is very important in order to realize good stimulated emission characteristics of deep UV MQWs. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Therefore, the growth of AlGaN has been the obstacle of development in UV-LD research and industry. Consequently numerous growth method has been suggested to obtain a crack-free AlGaN template [13][14][15][16][17]. Yoshida et al obtained Al 0.3 Ga 0.7 N template with low dislocation density by using hetero facet-controlled epitaxial lateral overgrowth.…”

Section: Introductionmentioning

confidence: 99%

“…In another method, the AlGaN grooved structure was used with top-down etching. The dislocation density and strain could be released by growing AlGaN on the grooved underlying structure, and the LED and LD was demonstrated at 356 nm by using grooved templates [14]. The laterally overgrown AlN with void structure was also used as a template for high quality AlGaN.…”

Section: Introductionmentioning

confidence: 99%

Wafer-scale crack-free AlGaN on GaN through two-step selective-area growth for optically pumped stimulated emission

Bae

Kim

et al. 2016

Journal of Crystal Growth

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Novel UV devices on high-quality AlGaN using grooved underlying layer

Cited by 62 publications

References 15 publications

The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor Deposition

The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor Deposition

Dislocation density dependence of stimulated emission characteristics in AlGaN/Al multiquantum wells

Wafer-scale crack-free AlGaN on GaN through two-step selective-area growth for optically pumped stimulated emission

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