2014
DOI: 10.1039/c4tc00456f
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Novel violet emitting material synthesized by stepwise chemical reactions

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Cited by 28 publications
(20 citation statements)
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“…Above all, to the best of our knowledge, mTPA–PPI is among the best NUV materials that have ever been reported, and exhibits a combination of a high-efficiency NUV EL, a narrow FWHM and a small y -value of CIE coordinate. 3d , 6 Key data of the mTPA–PPI-based device and other high-performance violet/NUV light-emitting devices with EL wavelengths below 410 nm are listed together in Table S5 † for the purpose of comparison. The superior device performances of mTPA–PPI could be ascribed to the following facts: (i) the meta -linkage of mTPA–PPI gives rise to a LE emission like PPI, which inherits high η PL and good colour-purity of the parent PPI; (ii) the introduction of a high-lying CT state promotes a RISC process to enhance η s in the mTPA–PPI device; (iii) the rising HOMO level facilitates easier hole injection in the mTPA–PPI layer due to the incorporation of TPA.…”
Section: Resultsmentioning
confidence: 99%
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“…Above all, to the best of our knowledge, mTPA–PPI is among the best NUV materials that have ever been reported, and exhibits a combination of a high-efficiency NUV EL, a narrow FWHM and a small y -value of CIE coordinate. 3d , 6 Key data of the mTPA–PPI-based device and other high-performance violet/NUV light-emitting devices with EL wavelengths below 410 nm are listed together in Table S5 † for the purpose of comparison. The superior device performances of mTPA–PPI could be ascribed to the following facts: (i) the meta -linkage of mTPA–PPI gives rise to a LE emission like PPI, which inherits high η PL and good colour-purity of the parent PPI; (ii) the introduction of a high-lying CT state promotes a RISC process to enhance η s in the mTPA–PPI device; (iii) the rising HOMO level facilitates easier hole injection in the mTPA–PPI layer due to the incorporation of TPA.…”
Section: Resultsmentioning
confidence: 99%
“… 4 Nevertheless, it is a great challenge to achieve high-performance OLEDs based on NUV emitters, and the external quantum efficiency (EQE) of NUV OLEDs is usually less than 2%, which is mainly ascribed to the intrinsic wide band-gap of NUV emitters that causes unbalanced charge injection and charge transport in OLEDs. 3d , 5 , 6 …”
Section: Introductionmentioning
confidence: 99%
“…[16] The synthesis of 5,5'-diiodo-2,2'-bipyridine (8)a st he coupling partnerf or the final Suzukir eaction was best performed in at hree-step sequence, starting from 9. [16] The synthesis of 5,5'-diiodo-2,2'-bipyridine (8)a st he coupling partnerf or the final Suzukir eaction was best performed in at hree-step sequence, starting from 9.…”
Section: Resultsmentioning
confidence: 99%
“…The advantages of HFF-QCMs are the improved lower detection limit and the faster response time, compared with normalQ CMs (5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20). This study displays the unique interactions of these materials with volatile organicc ompounds( VOCs) in the vapor phase.…”
Section: Resultsmentioning
confidence: 99%
“…Novel heterocyclic conjugation based materials could provide higher efficiency and lower driving voltage than reported material [2][3][4][5]. At present, green, blue and violet emitting materials with high efficiency and good color purity have drawn lot of attention, and various researches is being done to produce new light emitting materials that achieve high efficiencies and improved characteristics [6][7][8][9]. Photo-physical requirements of noble fluorescent material for OLED's are high fluorescence quantum yield, the suitable absorption wavelength for efficient energy transfer from excited host material, desired emission wavelength with ideal thermal stability and so on [10].…”
Section: Introductionmentioning
confidence: 99%