Novel Y-function based strategy for parameter extraction in S/D asymmetric architecture devices and low frequency noise characterization in GAA Si VNW pMOSFETs

Tahiat, A.; Cretu, B.; Veloso, A.; Simoen, E.

doi:10.1016/j.sse.2023.108709

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Novel Y-function based strategy for parameter extraction in S/D asymmetric architecture devices and low frequency noise characterization in GAA Si VNW pMOSFETs

Cited by 2 publications

References 16 publications

Is there a limit when the access resistance impact on the extraction of key GAA NS FETs devices parameters can (not) be avoided?

Is there a limit when the access resistance impact on the extraction of key GAA NS FETs devices parameters can (not) be avoided?

Discussion on the Main Mechanisms Contributing to the 1/f Noise in GAA Si VNW pMOSFETs

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